Preparation Of Conductive Transparent InON Film By Atomic Layer Deposition

With the development of display technology and increasing application requirements,transparent conductive film has become a research hotspot.Especially oxide transparent conductive films such as Sn O₂ based,Zn O based,In₂O₃ based films.Transparent conductive oxide film has a high band gap,a high transmittance in the visible light range and a very low resistivity characteristics,which makes it can replace the traditional metal film,used in the display and other fields.At present,with the development of new display technology,more and more attention has been paid to the research of new transparent conductive film and new preparation technology.This dissertation uses a new method and process to prepare transparent conductive oxide films:InON.Most of doped transparent oxide film are doped with cations to generate more carriers.In this paper,InON films were prepared by adding In₂O₃ with anion N.By adjusting the growth process,A huge different in the the resistivity and carrier concentration of the films was observed.The thickness of the film grown in this dissertation is about 30nm,all with flat surface.Films grown by PE-ALD have the advantages of lower temperature requirements,good uniformity and excellent step covering.So it can be provided for devices with low temperature requirements.The main research contents of this dissertation are as follows:1?Exploring the growth process of anion N-doped In₂O₃,using different growth sequences,growth temperature,plasma power,plasma time,etc.with different growth parameters,the obtained films showed huge different in resisivity.The lowest resistivity obtained is 9.6×10^-4?·cm in which the film has a high carrier concentration of 10²⁰cm^-3.2?Exploring the correlation between the film conductivity and the N atom content.It is found that the N content of the film with the best conductivity is 6.45%,and the resistivity increases when the N content is too high or too low.3?Influence of annealing to the properties of the film is investigated.The annealing gas used in this dissertation is air and argon.Different annealing time and annealing temperature are set in the same atmosphere.It is found that the annealing time does not have a significant effect on the films.Annealing temperature with the air atmosphere also has little effect on the conductivity of the film,but the temperature with the air atmosphere has a huge effect on the resistivity and carrier concentration of the film combining the results of XPS,EPR and Hall measurements conduction mechanism of the N doped In₂O₃ films is concluded to the formation NO_x^-nitrate with increased content of NO_x^-the film shows higher conductivity.But too high of NO_x^-content leads to the formation of F-center,which can capture free electrons,and leads to reduced carrier concentration and conductivity.4?After optimization,the lowest resistivity of the transparent conductive film obtained in this dissertation is 9.25×10^-4?·cm,the carrier concentration is 1.77×10²⁰cm^-3,and the mobility is 30cm²/Vs.The visible light transmittance reaches 92%.The film thickness is 30nm,and the film preparation temperature is 200°C,which provides more possibilities for temperature,step coverage,thin thickness requirements and flexible devices.