The Study Of Organic Memoristor Based On D-A Conjugated Metallopolymers

In the era of rapid development of information age,the huge energy cost of processing‘big data'and managing calculations have increased.The existing logic and memory equipment infrastructure has been greatly restricted,which had been named as‘von Neumann bottleneck'.In order to break through this bottleneck to realize brain like equipment and systems,experts and scholars put forward the concept of‘integration of storage and calculation',and the memristor came into being.The resistance of the memristor changes with the amount of charge flowing through the conductor,which makes it possess the potential of nonvolatile storage.Low power consumption and high response speed make it the first choice to realize artificial synapses.Based on the potential of memristor in neural morphological devices,many studies on active materials,conductive mechanisms,and synaptic properties have emerged in this field in the past decade.Polymer materials,as a kind of materials with large branches and flexible chemical structure,naturally become an important direction in the research of organic memristor.At present,almost all reported organic memristors lack the reproducibility,durability,stability,uniformity,scalability and speed required for industrial applications.Because of its unique D-A structure,metallopolymer has the ability of adjusting electron concentration and promoting the internal ion migration,and is a promising new organic material.The following work is carried out for the role of D-A type organic metallopolymers in the memristor:1.In this paper,two new metallopolymers MP1 and MP2 containing ferrocene and triphenylamine are used as the resistive-switching layer of memristor for the first time.Three kinds of organic memories(Ag/MP1/Pt,Ag/MP1/Si O₂/Pt,Ag/MP2/Pt)have been successfully prepared by PVD and spin coating by traditional silicon based technology.The film was characterized by SEM,AFM,metallographic microscope and step instrument.2.In this paper,the I-V cycle test,data retention ability and conductivity regulation of the prepared devices,such as Ag/MP1/Pt,Ag/MP1/Si O₂/Pt,Ag/MP2/Pt were tested.The influence of device structure and material structure on the electrical properties of the device is discussed.Additionally,the physical mechanism of the device is discussed by taking the organic conjugated mettlopolymer memristor based on MP1 as an example.Through linear fitting of I-V curve of Ag/MP1/Pt,it is found that the resistance mechanism is consistent with space charge limited current model,and the physical mechanism of conductive filament is determined.3.In this paper,based on the electrical study of Ag/MP1/Pt,Ag/MP1/Si O₂/Pt and Ag/MP2/Pt memristors,we further studied their applications in biological synapses.The short-term plasticity simulation,long-term plasticity simulation and memory enhancement simulation were carried out for the three devices,which laid the foundation for the organic memristor in the flexible brain-inspired system.