Energy Storage Property Of Plzst And PLZST-based Multilayer Thin Film

The technology of electromagnetic launch,as a emerging way has attracted more focus of reaseachers.It's no doubt's that technology of electromagnetic launch is able to apply to various dimensions concerning industry of national defence.Meanwhile,traditional impulsing power socurces with huge body are experencing phase-out.A kind of impulsing power socurces possess hign energy density?minute extension are in urgent need.It is known to us,antiferroelectric materials can easily realize high energy density.Thin films of antiferroelectric phase could be compatible with tiny equioments..However,it could hardly equip with high energy density and energy efficiency in the meantime.In this paper,I choose PZST as fundamental system to improve the energy storage properity by two ways:introudcing dapant and design of strcture of thin film.The antiferroelectric thin films with character of dispersion are in expectation.Combined with the basic principle of sol-gel process and spin coating method,thin films were prepared.Dopant introduction can be completed in the process of preparing precursor,and structural design can be realized by spin coating different sols.Single-phase antiferroelectric PZST thin films,PLZST thin films and composite structure thin films with relaxation phase components were prepared respectively.All sample films need to be characterized by phase and structure,and determined to be perovskite structure and reach a predetermined thickness before being tested for electrical properties.The Curie point of thin films was investigated by dielectric properties,and the phase transition behavior of thin films was analyzed by combining P-E loops.According to the P-E loops of thin films under different applied field strengths,the energy storage behavior of thin films can be analyzed,and then the modification mechanism of doping and structure design can be obtained.In the study of PZST thin films,it is found that the increase of Sn content is helpful to increase the saturation polarization intensity P_max of thin films,which improves the energy storage density of thin films to a certain extent,but the energy storage efficiency is average.On this basis,6%La³⁺is used to adjust the PZST component to stabilize the antiferroelectric phase and promote the"dispersion phase transition",and the reversible energy density of PLZST thin films with Sn content of5%and 10%is greatly improved.The La³⁺-substituted PLZST10 thin films with Sn content of 10%and 6%achieved reversible energy density of 27.73 J/cm3 under 900k V/cm external field,and the efficiency was 65%.On the basis of doping modification,the PLZT component with“relaxation phase”and PLZST10 are designed into sandwich structure of PLZT/PLZST10/PLZT,and the PLZT film of relaxation phase induces the whole film to show more obvious characteristics of"dispersion phase transition".A high reversible energy storage density of 29.65J/cm³was obtained in PLZT/PLZST10 film with the structure of terrace.The reversible energy storage density(18.89 J/cm³)of sandwich PLZT/PLZT 10/PLZT thin film is slightly lower than that of antiferroelectric PLZT 10 thin film,but the energy storage efficiency is increased to 73%.