Preparation,Structure And Growth Mechanism Of Highly Oriented YSZ Film Prepared By Electron Beam Evaporation

Epitaxial growth of diamond on large area Ir substrate is an important technique to obtain large size single crystal diamond films.Considering the difficulty of obtaining large-size single crystal Ir,the preparation of large-size Ir composite substrate is an important prerequisite for heteroepitaxial diamond.Ir/oxide/Si composite substrate with oxide as buffer layer and single crystal Si as substrate is a kind of composite substrate developed in recent years,which can be obtained in large area.YSZ thin film is an important buffer layer due to the advantages of crystal structure and lattice constant matching.In this paper,highly oriented YSZ thin film buffer layer was prepared on Si substrate by electron beam evaporation.The effects of substrate temperature,growth rate and growth thickness on the element composition,phase structure and surface morphology of YSZ thin films were studied;The crystal structure,atomic arrangement and composition change of Si/YSZ interface were studied,and the growth mechanism of highly oriented growth of YSZ was explained.The conclusions are as follows:XPS results show that the composition of the film is YSZ,EDS mapping results show that Zr,Y,O elements are evenly distributed in the film,and the internal phase of the film is uniform.Increasing the substrate temperature is beneficial to improve the crystal quality and(111)preferred orientation of YSZ films,especially at 700 ?.With the increase of substrate temperature,the grain size increases,and the film roughness is improved.However,the crystal orientation and surface morphology of YSZ films decrease when the substrate temperature is too high.The deposition rate has no obvious effect on the film roughness.The main function of deposition rate is to control the grain size and orientation.When the rate increases from 0.2 nm/s to 0.5 nm/s,the grain size increases significantly,and the preferred orientation of YSZ(111)increases significantly.Therefore,it is important to select the appropriate growth rate for the preparation of YSZ thin films with specific crystal structure.The growth thickness of YSZ films has a direct effect on the crystal quality and orientation of YSZ films,and the films nucleate and grow in island mode.With the increase of the thickness,the(111)orientation is preferentially observed,and the crystalline quality is significantly improved,the grain size is increased,and the film roughness is also increased.The interface structure between the film and substrate was analyzed by Transmission Electron Microscopy(TEM),and the growth mechanism of YSZ film prepared by electron beam evaporation was studied.YSZ thin films nucleate and grow in the VolmerWeber mode.With the deposition process,the islands grow and connect with each other.As the growth process proceeds,the growth mode of YSZ thin films prepared by electron beam evaporation method changes from the random orientation of the initial nucleation layer to the preferred orientation of(111)plane.