Investigation On Performance Regulation And ⁶⁰Co-? Rays Total Dose Effect Of Two-dimensional ?-In₂Se₃-based-phototransistor

The emergence of two-dimensional semiconductor materials takes important opportunities for the development of wearable,lightweight,high-performance,and wide-band detection optoelectronic device.Two-dimensional?-In₂Se₃ is a kind of direct bandgap ferroelectric semiconductor material with both in-plane and out-of-plane polarization,which has high carrier mobility and strong light absorption capacity.The?-In₂Se₃has been an important material for developing new optoelectronic devices.However,the current research on the photodetection performance of?-In₂Se₃phototransistor is not systematic.Furthermore,the investigation on reliability of the phototransistor used in strong radiation environment needs to be carried out urgently,and it is important to study the method modifying the photodetection performance.We focuse on the application of two-dimensional?-In₂Se₃ photodetection performance in this paper.After the detection performance of?-In₂Se₃ phototransistor for visible light and near-infrared light is explored,the radiation resistance of?-In₂Se₃ phototransistor in the ⁶⁰Co-?ray environment is explored,and the electrical repair of photodetection performance is investigated.In addition,the photodetection performance is regulated by improving the device structure.Specific research contents and conclusions are as follows:(1)The detection performance of?-In₂Se₃-based phototransistor in wide band and at wide temperature is studied.By using laser sources with wavelengths of 405 nm,660 nm and 1064 nm,the wide-band photoelectric performance of?-In₂Se₃phototransistor is studied.The wide-band photoelectric performance of?-In₂Se₃phototransistor is also studied at the temperature ranging from 20?to 120?with a wavelength of 660 nm.The?-In₂Se₃ phototransistor has excellent photoelectric performance with visible to near infrared wavelength;When the laser wavelength is660 nm,the photoresponse of?-In₂Se₃ phototransistor decreases only about 30%at the temperature increasing from 20?to 120?.The changing ferroelectric properties and local phase transition may be the main reasons for the photodetection performance degradation of?-In₂Se₃ phototransistor.(2)The radiation tolerance of?-In₂Se₃-based phototransistor is studied.The?-In₂Se₃-based phototransistor is studied before and after the ⁶⁰Co-?ray irradiations with total dose of 100 krad(Si),500 krad(Si)and 1 Mrad(Si),and the heal effect of bias voltage on the photodetection performance is also explored.The results show that the performance of?-In₂Se₃-based phototransistor decreases with the increase of ⁶⁰Co-?ray irradiation dose.The domain switching induced by total the ⁶⁰Co-?ray irradiation is the main reason for the degradation of the photodetection performance in?-In₂Se₃-based phototransistors.The bias voltages of 10 V and-10 V can partially restore the photodetection performance of the?-In₂Se₃-based phototransistor to the initial level.(3)The modulation of?-In₂Se₃-based phototransistor is studied.Ta₂NiS₅/?-In₂Se₃-based phototransistor is designed and prepared.The phototransistor performance is tested under the same environment before and after the structure improvement.At the wavelength of 405 nm and 660 nm,the photoresponse of the phototransistor increases from 0.49 A/W and 0.9 A/W to 162.4 A/W and 322.6 A/W after improvement,respectively.The results show that Ta₂NiS₅/?-In₂Se₃ structure improvement greatly improves the photodetection performance of?-In₂Se₃-based phototransistor,and the structure is an effective way to regulate?-In₂Se₃-based phototransistor.