Synthesis Of Organic Semiconductor Materials For Field Effect Transistor And Its Application In Sensors

The field-effect transistor has attracted intense research attention and made great progress due to its light weight,small size,good flexibility,low manufacturing cost,easy micro/nano integration,as well as many other advantages,but there is still a certain amount of challenges in realizing its industrialization and commercialization.This dissertation focuses on the organic semiconductor materials,one of the most important components of organic field-effect transistors,to designs and synthesize new organic small-molecule semiconductor materials,as well to measure the physical and chemical properties.Furthermore,the field-effect transistor devices were prepared and applied in gas sensing.The main research contents are listed as following:1.Three cross-shaped two-dimensional fused ring compounds ICZ-P,ICZ-T and ICZ-S were designed and synthesized,and the crystals of ICZ-P and ICZ-T were grown by vacuum sublimation method,and the single crystal structure was analyzed by X-Ray crystallographics.The thermal properties,photophysics and electrochemistry of these compounds were characterized by using thermogravimetric analysis,ultraviolet-visible absorption spectroscopy and cyclic voltammetry.The thin film structures of these three compounds were also characterized by atomic force microscope and X-ray film diffraction.The field effect transistor devices based on ICZ-P,ICZ-T and ICZ-S thin films were fabricated by vacuum evaporation method and with bottom-gate top-contact configuration,and their electrical performance were studied,and the highest film mobility was 0.26 cm²V.^-1s^-1.The OFET devices based on ICZ-P?ICZ-T exhibit obvious response for the dimethyl methylphosphate(DMMP)sensing.2.To explore the effect of asymmetric structure on the performance of organic field-effect transistors,three linear compounds ABT,ABF and ABI with anthracene as the core structural unit were designed and synthesized.By using thermogravimetric analysis,ultraviolet-visible absorption spectroscopy and cyclic voltammetry,the thermal,photophysical,and electrochemical properties were characterized.The crystals of ABI and ABF were obtained by vacuum sublimation method and the single crystal structure was analyzed by X-ray crystallographics.The thin film field effect transistor was fabricated in the bottom-gate-top contact mode,and the results showed that the mobility of the three compounds increased first and then decreased when the substrate temperature increased.Its sensing performance based on ABT?ABF and ABI OFET devices shows that the response of ABT is largest and the response of ABI is the smallest under the same concentration of DMMP.3.The compounds DPF,DPYF and DNPF with fluorene as core structural unit were designed and synthesized,and the thermal,photophysical and electrochemical properties were characterized through thermogravimetric analysis,ultraviolet-visible absorption spectroscopy and cyclic voltammetry.To explore the influence of the introduction of different structural groups on the performance of field-effect transistors,the thin films of DPF,DPYF and DNPF were prepared by the vacuum coating method,and the thin-film field-effect transistors were prepared in the bottom-gate-top contact mode at different substrate temperatures.The results show that the highest mobility reached up to 0.112 cm²V^-1s^-1 for DNPF fabricated at 60°C.Its sensing performance exhibit that the DNPF-based OFET sensor is more sensitive to detecting the same concentration of DMMP than DPF...