The Theory Prediction,Preparation And Electrical Properties Research Of Two-dimensional InGTe₃ Semiconductor

The recent revival of CMOS technology,limited by Moore's Law,requires the discovery of new materials.Two-dimensional(2D)layered semiconductor materials have been developed rapidly due to the properties of its atomic thin bodies,which enable it to reduce the size without causing harmful short-channel effects.P-type 2D semiconductors play a vital role in many electronic and photoelectric devices such as complementary logic circuit,phototransistors and light emitting diodes(LED).However,most 2D semiconductors are n-type,and the p-type semiconductor family is relatively small,which greatly limits the extensive application of 2D semiconductors in practical applications.Although the p-type conductive can be obtained by contact engineering,chemical doping and electrostatic doping,complex manufacturing processes or device structures are required.It is necessary to explore the direct synthesis of high-quality p-type 2D semiconductors.In this paper,the electron band structure of InGeTe3 is studied by first principles calculation.The results show that under the HSE06 functional,the single-layer InGeTe3 has the direct band gap of 1.44 e V.Subsequently,it was found that the InGeTe3 monolayer band edge has a smaller effective carrier mass and a higher carrier mobility.To explore the possibilities of the experiment,it is found that InGeTe3 has low stripping energy and good stability,and has a wide range of absorption spectrum from visible to ultraviolet light.The above indicates that InGeTe3 has superior electronic properties and experimental feasibility.The next,bulk InGeTe3 crystal was synthesized successfully by chemical vapor transportation,and thin layers of InGeTe3 single crystal with different thickness were obtained by mechanical exfoliation.Then by means of XRD,XPS,AFM,Raman and TEM,it was characterized and proved to have good crystal quality.Finally,based on the different thickness of InGeTe3 thin layer,field effect transistors were prepared by micro-nano processing technology,and different devices were tested.The test results show that InGeTe3 belongs to p-type semiconductor material.Next,the devices based on different thickness and length of channel material were analyzed,the study found that the device showed different characteristics.The optimal on/off ratio of devices up to 10³-10⁴,mobility up to 15 cm²V^-1s^-1,and subthreshold swing is about 0.8 V/decade.In addition,its low-temperature transport characteristics were also studied in this paper,which were consistent with the semiconductor transport operation.Finally,by fitting the comparison curve between conductivity and 1000/T,the curve showed typical Arrhenius characteristics.