| Electric pyrotechnics is the most widely used pyrotechnics at present.With the deterioration of the application environment,the requirements for it are getting higher and higher,usually requiring high safety and high reliability at the same time.However,the response mode of electric explosive is mostly induced current when it is subjected to electromagnetic unexpected stimulation.Inductive current heats up the energy converter,thus affecting the performance.That is the damage mechanism is the same as the normal ignition mechanism,which means that if safety needs to be improved,the safety current(maximum non-ignition current)must be increased to blunt it,which is bound to reduce reliability.In yuan is the core component of electric initiating explosive device,its performance is directly related to the reliability and security of need,change to the substrate material and parameters is also an important aspect to influence can change efficiency,therefore,an urgent need to explore a new system can change yuan technology,that can not only improve security,and can improve the efficiency of can change,the balance of safety and reliability.In this paper,the metal Cu bridge film energy transfer element,from the metal Cu film preparation,film graphics,metal Cu bridge film simulation and metal bridge film ignition test carried out research.In this paper,metal Cu thin films were prepared by different processes.Firstly,the role of common substrate materials was investigated,and the characteristics of various materials were analyzed.Finally,Al N ceramic material was selected as the substrate material of metal Cu film.Secondly,the basic principle,test equipment and raw materials of thin films prepared by electron beam thermal evaporation method and magnetron sputtering method in physical vapor deposition were described.Metal Cu films were successfully prepared according to the two processes.The adhesion and deposition rate of scheme 1(electron beam thermal evaporation)and Scheme 2(magnetron sputtering)films were measured and calculated.The results show that the adhesion and deposition rate of films prepared by magnetron sputtering are better than that by electron beam thermal evaporation.Preparation of metal Cu thin films using different process methods.By investigating the role of common substrate materials and analyzing the characteristics of various materials,Al N ceramic materials were finally selected as the substrate materials for metal Cu thin films.The basic principles,experimental equipment and raw materials of thin films prepared by electron beam thermal evaporation and magnetron sputtering in physical vapor deposition were briefly described.Metal Cu films were successfully prepared according to the two processes of thin film preparation.The adhesion test and deposition rate measurement and calculation of the two films prepared by scheme 1(electron beam thermal evaporation)and scheme 2(magnetron sputtering)were carried out.The results are the adhesion and deposition rate of the films prepared by magnetron sputtering.Both are better than electron beam thermal evaporation.The metal Cu bridge film was prepared by laser cutting process and its microstructure was characterized.The principle and advantages of laser cutting are introduced,and the metal Cu film is patterned according to the process flow of laser cutting.In order to achieve optimal results with laser cutting,the laser power,scan speed,and frequency are analyzed and discussed.The surface morphology of the cut Cu bridge film samples was characterized,and it was found that there was excessive etching after laser cutting and the phenomenon was analyzed.The simulation is carried out using COMSOL finite element analysis software.Briefly describe the basis of finite element simulation,the essence of which is to discretize complex problems and solve them separately.The basic process of finite element simulation is introduced,and according to the basic process,the temperature distribution of Cu bridge film under 100 V voltage in different time periods,the temperature distribution of Cu bridge film under different voltages and the temperature distribution of Cu film under different sizes are simulated.The results show that the simulation results in the range of 0-20 ns can be used as a practical reference for the melting and heating process of the Cu film under current excitation;As the voltage increases,the temperature rise rate of the Cu bridge film increases.By comparing the center temperature of the bridge region with the size of the 300x300?m and 500x500?m bridge regions under the excitation of 100 V current,it is found that as the size of the bridge region increases,the heating rate of the bridge region decreases.Ignition experiments were performed on metal bridge films prepared by electron beam thermal evaporation and magnetron sputtering by DC power supply.The ignition test of Cu bridge films with different bridge area sizes under the two processes was carried out,and it was found that the ignition voltage of the bridge area size of 300×300?m was lower;the bridge area size of the electron beam thermal evaporation method was 300×300?m.The average ignition voltage of the metal Cu bridge film prepared by magnetron sputtering is 300×300?m,and the average ignition voltage is 65 V,indicating that the ignition energy of the Cu bridge film prepared by magnetron sputtering process is lower than that of electron beam thermal evaporation. |
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