Measurement Of Film Deposition Temperature By DC Pulse Magnetron Sputtering

During magnetron sputtering,there are two aspects of the film deposition temperature:the temperature of the substrate and the growth surface of the film.The temperature of the film growth surface is more important than the temperature of the substrate,because it greatly affects the film growth mode.Due to the low spatial and temporal resolution of the traditional temperature measurement method,it is very difficult to obtain the surface temperature of the thin film growth.In order to solve the above problems,a new method for measuring the surface temperature of the thin film growth is adopted in this paper,which is verified by measuring the temperature of the TiO₂ film growth surface.(1)NiCr/NiSi thin film thermocouples were prepared by DC pulse magnetron sputtering.The potential-temperature characteristic curve of NiCr/NiSi thin film thermocouple heat was obtained by static calibration,and its Seebeck coefficient was 10.42?V/?.(2)Taking the measurement of TiO₂ film deposition temperature as an example,the home-made NiCr/NiSi film thermocouple and the standard K-type patch thermocouple were used to measure the film deposition temperature under different sputtering power density.With the increase of sputtering power density from 0.83-5.00 W/cm²,considering the temperature of the NiCr/NiSi thin film thermocouple lead-out temperature,the surface temperature of the film growth increased from 197?to 541?,and the substrate temperature increased from 125?to 324?.(3)During the film deposition process,the absorption of thermal energy mainly occurs on the film growth surface and the existence of a large temperature gradient from the film growth surface to the film growth substrate,which causes the film growth surface temperature to be much higher than the substrate temperature.Combined with the deposition temperature of TiO₂ film,the reason why TiO₂ film changes from amorphous to anatase phase with the increase of sputtering power density was explained,that is,the growth surface temperature of the film was the main factor in the change of the crystal structure of the film.Finally,the future film growth behavior can be adjusted according to the temperature of the film growth surface during the sputtering deposition process to obtain an ideal film.