Research On Electron Capture Optical Information Storage Based On Fluorescent Glass

The advent of the"big data"era poses unprecedented challenges to information storage.The development of new low-cost,high-energy-efficiency optical storage modes and optical storage materials is imminent.The electron trapping optical storage technology that emerged in the 1980s has high storage density,fast access speed,and can realize optical signal multiplexing（by changing the excitation intensity of the writing wavelength,the optical signal intensity can be changed-the intensity dimension is introduced）,etc.Advantages have received widespread attention since its inception.However,since most of the electron trapping materials reported so far are powder materials,in practical applications,the powder materials need to be dispersed in organic matter to form a thin film.In the thermal environment caused by long-term repeated irradiation of high-energy density lasers（information access）,organic matter is prone to aging,which significantly affects the service life of optical storage materials.In addition,for the powder-organic compound film,the optical signal can only be recorded and read on the surface,and the data is not only easily affected by the environment and lost,but also the storage dimension（capacity）is limited.Therefore,it is of great significance to develop new optical storage materials with high safety,long lifespan,and space multi-dimensional optical storage.In this thesis,fluorescent glass is selected as the electron-trapping material,and the storage performance of electron-trapping optical information is adjusted by changing the glass matrix,doping type and concentration,etc.,and the mechanism of fluorescent glass electron-trapping optical information storage is studied.The specific research of this paper is as follows:In the first chapter,the research background of electron-trapping optical information storage,the mechanism of electron-trapping optical information storage,the research status and development prospects of fluorescent glass electron-trapping optical information storage are introduced in detail.In the second chapter,Mn²⁺doped silicate fluorescent glass ZnO-P₂O₅-SiO₂ were prepared by high temperature melting method to realize the function of optical information storage.By studying the photoluminescence spectra,long afterglow spectra,and photo-excited luminescence spectra of samples,it is found that the main peak is located at 607nm,which has the appropriate wavelength in the transparent window of biological tissue,and can be used in the field of biomedicine and biological imaging.Studies have shown that ZnO-P₂O₅-SiO₂:Mn²⁺glass photoluminescence,long afterglow,and photo-excited luminescence are all derived from the ⁴T₁（⁴G）→⁶A_1g（⁶S）electronic transition of Mn²⁺.The internal depth of the trap is up to 0.908e V and the images and letters are stored by pyrospectroscopy.Due to the concentration quenching,when the Mn²⁺ion doping concentration is0.1 mol%,the ZnO-P₂O₅-SiO₂:Mn²⁺glass has the strongest light-excited luminescence performance,and its optical information storage capacity is also the strongest.Experiments show that ZnO-P₂O₅-SiO₂:Mn²⁺glass is a suitable optical information storage carrier.In the third chapter,The Tb³⁺-doped fluorescent glass ZnO-P₂O₅-B₂O₃-SiO₂ were prepared by the high-temperature melting method to realize the function of multi-wavelength optical information storage.The excitation spectrum shows that the sample can be separately excited by 260nm and377nm ultraviolet light,and the multi-wavelength emission of the rare earth ion Tb³⁺is used to realize multi-wavelength optical information storage and improve storage density.By studying the fluorescence spectrum,long afterglow spectrum,and light-excited luminescence spectrum of the sample,it is found that the green fluorescence originates from the ⁵D₄-⁷F_J（J=6,5,4,3）electronic transition of Tb³⁺,with peaks at 491nm,545nm,587nm and 623nm,respectively.Experiments show that the photo-excited luminescence performance increases with the increase of the concentration of rare earth ion Tb³⁺.The internal depth of the trap is up to 0.958e V and the storage of images and letters are analyzed by pyrospectroscopy.The experiment shows that the material is suitable as an electron-trapping optical storage carrier.In the fourth chapter,Mn²⁺doped fluorescent glass Na₂O-Ga₂O₃-GeO₂ was prepared by high-temperature melting method to realize the function of optical information storage.By studying the photoluminescence spectra,long afterglow spectra,and photoexcited luminescence spectra of the samples to analyze the trapping and release of carriers by traps inside the sample,the results show that Na₂O-Ga₂O₃-GeO₂:Mn²⁺photoluminescence,long afterglow,and photoexcited luminescence are all ⁴T₁（⁴G）→⁶A_1g（⁶S）electronic transition derived from Mn²⁺.The internal depth of the trap is up to 0.966e V by pyro-spectroscopy,and experiments show that the material is suitable for optical information storage carriers.