Design And Test Technology Of A SiC Drift Step Recovery Diode

With the continuous development of pulse power technology,the application scenarios of ultra-wideband high-speed signal pulse technology put forward more new requirements for pulse power switches.Among them,all-solid-state semiconductor switches are becoming the focus of attention due to their small size,high repetitive operating frequency,and high reliability.Among all solid-state semiconductor switches,silicon carbide drift step recovery diode(SiC DSRD)devices have the advantages of high power,high pulse output voltage peak,high repetitive operating frequency,small size,etc.,which are very suitable for pulse power field.However,there are few domestic researches on DSRD devices,and the development of pulse power technology based on DSRD devices is restricted.In response to the needs of pulsed power applications,this paper designs a SiC DSRD device with a blocking voltage of more than 10 k V.It has the advantages of high pulse power,high pulse rise rate,high repetitive operating frequency,and high reliability.The demand for pulse switches in pulse power applications such as ultra-wideband radar and laser technology.The specific content of this article is as follows:(1)Through analyzing the requirements of pulse power technology on semiconductor switching devices and the impact of semiconductor switching device performance on pulse power output,this paper determines the design and optimization direction of the device.(2)Design a SiC DSRD device with a blocking voltage above 10 k V and its pulse circuit.The main content of the device design includes SiC material modeling,cell structure design and junction terminal design to achieve a device withstand voltage of 10 k V.The main content of pulse circuit design includes determining the structure of the pulse circuit through simulation,and analyzing the influence of different structures of the device and each element in the pulse circuit on the pulse output,and determining the high repetitive operating frequency and high pulse output power in the pulse power application field.The structure and circuit parameters of the device with high performance such as high pulse output voltage peak value,and successfully taped out the device and built a test platform.(3)Test the pulse characteristics of SiC DSRD devices.The effects of parasitic inductance,load resistance,and the number of loops on the pulse output are studied,and the pulse circuit is optimized.The pulse output voltage peak value is greater than 10 k V,the pulse leading edge is less than 2ns,the pulse current is greater than 1 k A,and the repetitive operating frequency is greater than 500 k Hz.The operating temperature is greater than 100°C,so the device has good dynamic pulse characteristics,which meets the needs of DSRD devices in the field of pulse power applications.