Fabrication And Characterization Of ZnO:Li Memristor Crossbar Arrays

Now entering the era of big data,the requirements for semiconductor storage technology are getting higher and higher.Memristors are expected to be applied to practical circuits by their unique advantages such as non-volatility,and memristor crossbar arrays are essential in memristor logic circuits.In this paper,the surface morphology and microstructure of the Zn O:Li memristors were analyzed by X-ray diffraction and atomic force microscopy,and to study the effects of preparation conditions(oxygen content,sputtering time,etc.)on Zn O:Li memristors were studied.When the argon flow and oxygen flow were 20 sccm and 5 sccm,respectively,and the Li doping concentration was 5 wt%,the prepared Zn O:Li memristors had better resistive switching characteristics than others,and the resistive switching window can reach 10~5,they also had great consistency.It is found that the smaller the effective area of the resistive layer,the smaller the Set voltage range of the Set process,and the better the consistency.Combining the resistive switching mechanism and conduction mechanism of Zn O:Li memristor,the basic structure of Zn O:Li memristor cross arrays were given.Under the optimized parameters,the fabrication process of Zn O:Li memristor crossbar arrays were studied by combining magnetron sputtering and lift-off technology.At room temperature,the characteristics of the memristor crossbar arrays were studied by using a semiconductor parameter tester.The results show that the 16memristor units on the 4×4 crossbar array all have resistive switching characteristics,and the characteristics of the memristor units have a certain consistency.The effect of the effective area of the resistive switching layer on the resistive switching characteristics of the memristor crossbar arrays were studied.As the area of the resistive switching layer increases,the range of the Set and Reset voltages showed a gradually increasing trend.The Not logic function of the auxiliary logic circuit was tested with a semiconductor parametric tester.The"back-to-back"structure of the Zn O:Li memristor was studied.The comparison showed that the"back-to-back"structure of the memristor had the rectification characteristics.The consistency of its resistive switching characteristics was better,.and it had good retention characteristics.It laid a practical foundation for realizing a Zn O:Li memristor crossbar arrays with good consistency.