| Wireless communication technologies are majoy parts in modern communication systems,which have developed rapidly in the past few decades,and have promoted the continuous advancement of society in the direction of information sharing and efficient interconnection.Affected by smart mobile electronic products,mobile communication has gradually become the mainstream communication method in people’s lives.From the initial support of only voice calls to the current meet of various data transmission services,it has undergone several generations of changes.At present,the world has entered the fifth-generation mobile communication(5G)era,which can meet people’s requirements for high-speed,low-latency,and large-capacity communication performance.As an important part of the front-end of the radio frequency communication system,the low-noise amplifier has more stringent requirements for its performance indicators such as noise,gain,and linearity in the application of 5G.5G communication frequency bands include Sub-6GHz and millimeter wave communication frequency bands.In this paper,based on the Ga As p HEMT process,two lownoise amplifiers are designed for the two frequency bands of 5G,covering the n38 and n257 frequency bands in the 5G communication standard,respectively,with good overall performance.The first low-noise amplifier monolithic integrated circuit designed with 0.25μm Ga As p HEME technology in the Sub-6GHz frequency band.It is realized by a single-stage cascode structure,which has a higher output impedance and gain than traditional common-source amplifiers.The common source stage introduces the source inductance degeneration structure in the form of gold wire bonding to the ground forming a local negative feedback,which can obtain a large Q value.Adjust the value of the inductance to realize the coordinated optimization of noise and gain,realize lower noise and ensure the gain at a higher level.Parallel RC feedback structure is used in output matching to improve gain flatness and increase working bandwidth.Through testing,the operating frequency is 2.5-2.7GHz,covering the 5G n38 band,the noise figure is less than 2d B,the small signal gain is up to 17.5d B,the gain flatness is less than 0.2d B,and the input 1d B compression point is greater than-2.4d Bm.The second design uses a 0.15μm Ga As p HEMT process to design a millimeter-wave low-noise amplifier monolithic integrated circuit operating at 26-30 GHz,which covers the 5G n257 band.Because millimeter-wave communication has more stringent requirements for RF performance,the circuit uses a three-level common source cascade to improve gain.The parasitic effect of the plane wire wound inductor commonly used in low frequency will increase in the millimeter wave frequency,which affects the circuit performance.For this reason,we adopt the method of microstrip line matching to reduce the parasitic effect,and concurrently optimize the design of bandwidth,noise and gain.The test results show that the millimeter-wave low-noise amplifier works at 26-30 GHz,covers the 5G n257 frequency band,has a noise figure of 2.5-3d B,and achieves a high gain of over 22 d B,and the output 1d B power compression point is greater than 14 d Bm. |
PDF Full Text Request