Millimeter-wave CMOS Low Noise Amplifier Design

With the development of the mobile internet in recent years, people put forward to higher wireless communication rate. The millimeter-wave wireless communication chips is attracted more and more attention as a fundamental part of high-speed wireless communication system.With the continuous development of CMOS integrated circuit technology, the CMOS millimeter-wave chip has exhibited more excellent performance then conventional III-V millimeter-wave chip, and the CMOS process has lower cost and lower power comsuption. Therefore, making research on high performance, low cost, highly integrated CMOS millimeter-wave wireless communication chip has important practical significance.Low noise amplifier(LNA) is the most important port of wireless communication system, its performance directly affects the sensitivity, gain, linearity of the receiver, so the design of high-performance LNA millimeter-wave wireless communication is an importance part of chip design. This paper introduces the design of two Q-Band millimeter-wave LNA base on introducing the basic theory of CMOS low noise amplifer and common basic structure of LNA.A Q-band CMOS LNA exploiting transformer positive-negative feedback and noise cancelling is presented. The proposed low noise amplifier consists of a positive transformer feedback to achieve noise-reduction and a conventional noise cancelling struture. Based on measurements, this LNA achieve a voltage gain of 10.2dB, a noise figure of 6.5dB and an input IP3 of-2.6dBm. It consumes 11.5m A from a 1.2V supply and the total area of this design is 0.42mm2.A CMOS low noise amplifer based on gm-boost technology is introducted, the gm-boost is formed by using a transformer between the gate and souce of MOS. In order to reduce the influence of miller capacitor and improve the reverse isolation, the second and third stage of this circuit is achieved by transformer negative feedback structure. Based on measurements, this low noise amplifer achieve a voltage gain of 16.9dB, a noise figure of 4.53 dB and input IP3 of-1.7dBm. It consumes 14.7m A from a 1.2V supply and the total area of this design is 0.47mm2.