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Research On A Key Technology Of Rf Receiving Front End Module For 5G Base Station End

Posted on:2022-07-18Degree:MasterType:Thesis
Country:ChinaCandidate:Y LuFull Text:PDF
GTID:2518306557965669Subject:Electronics and Communications Engineering
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With the continuous advancement and innovation of technology,the requirements for radio frequency devices in communication systems have become more stringent.Radio frequency devices are the core of wireless connection and the basis for signal transmission and reception.With the rapid development of 5G technology,now 5G technology has been applied to many terminal equipment,Internet of Things devices,such as smart phones,etc.,followed by the rapid growth of the radio frequency front-end market,which puts great demands on the radio frequency front-end module.A series of new requirements such as power,high integration,low power consumption,low cost,and localization.As the operating frequency and complexity of the system increase,the RF switch and Low Noise Amplifier in the RF front-end receiving module must have higher performance and work efficiency.This thesis analyzes the RF switch and low-noise amplifier in the RF front-end receiver module,and lists and analyzes the common low-noise amplifier and RF switch structures.The Low Noise Amplifier circuit has designed a two-stage amplifier structure of current multiplexing and cascode,and designed an ESD protection circuit to improve the electrostatic protection level of the low-noise amplifier;in the high-power radio frequency switch,an asymmetric series-parallel switch circuit is designed,the thermal design is optimized according to actual needs,which improves the isolation,switch response speed and reduces the layout area.Finally,the Low Noise Amplifier and radio frequency switch were formed into modules,and an evaluation board was designed to test the overall performance of the single Low Noise Amplifier and the module respectively.Gallium arsenide(Ga As)has a good electron migration rate and is suitable for radio frequency circuits with long distances and long communication times.Monolithic microwave integrated circuits based on Ga As chips have excellent performance and high reliability and are widely used.The rapid development of microwave imaging,wireless communication,radar detection,radio astronomy and other fields has continuously increased the requirements for the miniaturization,high performance,and low power consumption of microwave circuits.The thesis is based on the Radio Frequency Integrated Circuit Industrialization Project of anjing Guobo Electronics Co.,Ltd.,upgrades the RF receiving front-end module GNB1007 by optimizing the functional layout and structural design of the module.The Low Noise Amplifier is the first-stage active circuit of the radio frequency receiving channel,and its performance will directly affect the signal processing capability of the entire receiving module.In this thesis,a Low Noise Amplifier is developed based on 0.25?m Ga As p HEMT.The Low Noise Amplifier uses a two-stage cascade topology.The first stage uses a source negative feedback current multiplexing structure,and the second stage uses a cascode structure.The input port adopts minimum noise matching,and the output port adopts maximum gain matching.Both the port standing wave and gain flatness are optimized,and the model parameters of inductance and capacitance are extracted and verified.It is on the basis of satisfying gain,noise figure and stability.The component size is reduced to 1.8mm*1mm and the integration level of the Low Noise Amplifier circuit is improved.On the development of radio frequency switch,this thesis designs a Single Pole Double Throw(SPDT)switch suitable for highpower operation mode based on PIN diode.The circuit structure and layout design are optimized according to the passing power and heat loss,which effectively reduces the chip area.The final module size is 5mm*5mm*1.2mm.In the 1.9?4GHz band,the insertion loss is less than 0.4d B,the pass power is 120W(Continuous Wave Power),the isolation is greater than 40 d B,the noise figure is less than 1.0d B,and the gain is greater than 30 d B.Compared with the traditional technology,the RF receiving front end reduces the power consumption of the receiving link by 20%,and the size is reduced by 43%,which greatly reduces the module size and improves the overall integration.
Keywords/Search Tags:5th generation communication, LNA, SPDT, RF Receiving Front End
PDF Full Text Request
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