| Recently,the development of microwave communication systems has been put forward many requirements for system capabilities,such as smaller size,cheaper price,and more functions in higher frequency bands.As one of the important components of wireless communication,how to integrate the antenna with the communication system and achieve better performance has always been the difficulty of antenna design.The silicon-based three-dimensional integration process has high processing accuracy,can produce complex three-dimensional structures,and has the characteristics of heterogeneous integration capabilities,which provides new options for the design of integrated antennas.Based on the silicon-based three-dimensional integration process,this paper studies and designs the 94GHz integrated antenna.The difficulties in the design of high-frequency silicon-based integrated antennas are:on the one hand,the gain of silicon-based on-chip antennas is generally not high.On the other hand,in the W-band,a single antenna unit is difficult to provide the required gain of the system,and the feed network of the array will occupy a large space and increase the antenna size.To solved the above-mentioned problems,this article starts from the two directions of antenna structure and process design to realize a silicon-based antenna.Based on the TSV technology,this paper proposes three structures to realize the interconnection between layers,and finally a paper clip-shaped structures selected.The antenna consists of three layers of 150μm thick high-resistance silicon substrate,and its feed network and radiation patch are located on different layers.Based on this structure,the design and development of the process flow were subsequently carried out.Finally,based on the process flow given in this article,a W-band 8×8microstrip array antenna was realized and the antenna test was carried out.The test result shows that the antenna bandwidth is 90.3-98.6GHz,and the gain is about 7.8dBi at 94GHz. |
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