| Photoresist,also known as photoresist,is a photochemical material applied in the field of microelectronics.It is a crucial technological breakthrough to realize the miniaturization and integration of electronic devices and circuits in the world.Black matrix photoresist plays a role in shading and providing a frame for color photoresist in the field of plate display.Flat panel display is popular in recent years because of its high resolution and light volμme.However,due to the cost and appreciation,the large size and narrow border of the panel are the demand and trend of the future development of the market,while the large size and narrow border panel require the black matrix photoresist to show higher surface impedance performance.At present,even imported materials only a few photoresist meet the needs of use,so it is particularly important to develop domestic black matrix photoresist with high surface impedance performance.In this paper,black matrix photoresist with high surface impedance is developed from two aspects:the process and the composition of photoresist,and a series of performance characterizations of the final product are carried out.The specific experimental studies are as follows:1.The effects of film thickness,vacuμm pressure(VCD),pre-baking time and temperature,exposure energy,development time,post-baking time and temperature on the surface impedance properties and other properties of photoresist were investigated by using commercial photoresist as the research object.The results are as follows:in a certain range,with the decrease of exposure energy,the decrease of post-baking temperature and the decrease of post-baking time,the surface impedance value of photoresist will be increased to 1014 Ω/□.while other process conditions have little effect.However,by changing the exposure and post-baking conditions to improve the surface impedance,the line width will decrease and the morphology will become worse,so it is not considered in practical application.2.When exploring formula synthesis,fixed process conditions are used to investigate the types and molecular weight of photosensitive resin,poly functional group monomer,photo initiator,color slurry and carbon content,dispersion resin,surface resistance of photo resist and other properties.Further characterization of the prepared photo resist is made by using a surface impe dance instrμment,optical density meter,film thickness instrμment,optical micro microscope(OM),scanning electric mirror(SEM).The results are as follows:Within a certain range,the types of printing ink,black carbon content in the matrix,the content of dispersant,the types of resin,the kinds of the types of initiator and monomer will impact on the photoresist surface impedance value,and with the loss of the mill base carbon content and the decrease of the carbon particles structure size and the increase of content of dispersant can make the surface of the photoresist impedance value up to 1015 Ω/□.The rest of the formula material will not affect the surface impedance value.3.This experiment,the optimized samples were prepared by using the best process and formula synthesis conditions.the surface impedance performance was significantly improved by the instrμment,and the impedance value reached more than 1015Ω/□.Moreover,it was detected that the sample had the film thickness value and covering property that met the requirements,and had good morphology,good adhesion and excellent surface hardness when used Mask exposure. |
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