Preparation Of High Performance AlSiC Electronic Packaging Substrate Materials

With the rapid development of electronic information industry,especially the evergrowing application of high-frequency and high-power electronic components,more and more requirements are put forward for electronic packaging materials.Electronic packaging materials play the important roles of support,protection and heat dissipation in integrated circuits,which requires that the packaging materials have excellent properties,such as high thermal conductivity,low thermal expansion coefficient,high strength and low density,et al.Al Si C（Also known as Al/Si C or Al/Si Cp）composites have the advantages of thermal and physical properties of Al metal and Si C ceramic,which meets the requirements of electronic packaging materials for high-power electronic components,so it is one of the hot topics in the research of metal matrix composites.In this paper,high performance AlSiC material is prepared by vacuum pressure infiltration method.The method mainly includes the preparation of porous Si Cp prefabricated parts and the infiltration of molten aluminum alloy.The prepared Al Si C composites were studied and characterized,and the preparation process was summarized and analyzed.The research work of this paper was mainly carries out in the following aspects:（1）Using the molding method to prepare SiCp preforms with the introduction of a certain amount of aluminum oxide ceramic precursor and the Si Cp preforms with better performance could be successfully prepared under forming pressure in 60～100 MPa and the sintering temperature of 1100℃;（2）It was found thar the SiC volume fraction of composite prepared by single particle size Si C powder was low and the properties of prefabricated parts were poor.Higher volume fraction of Si Cp prefabricated parts could be obtained by the combinational use of three particle size powders;（3）It is difficult for Al alloy solution to infiltrate SiCp prefabricated parts prepared through three kinds of particles with the particle size（D50）of 106μm,40μm and 1μm.When the particle size is adjusted to 106μm,40μm,10μm as well as the content of small particles is reduced,the Al Si C composite with better properties can be successfully prepared by vacuum pressure infiltration method;（4）The optimized AlSiC composite has the lowest thermal expansion coefficient（30-400℃）of 7.73×10^-6/K,the highest bending strength of 269.1 MPa and the highest thermal conductivity of 125.67 W/（m·K）,which can meet the requirements of electronic packaging materials;（5）When the proportioning ratio the SiC powders with three kinds of particle sizes is 4:1:2,the forming pressure is 60 Mpa,and the sintering temperature is 1100℃,the composites have comprehensively good properties with the thermal conductivity up to 125.67 W/（m·K）,the thermal expansion coefficient up to 8.05×10^-6/K,and the bending strength up to 243.7 MPa.Furtheremore,the microstructure of the composites is uniform and well compact.In a word,the research work of this paper focuses on the vacuum pressure infiltration of Si Cp performs.High performance Al Si C composite materials have been successfully prepared,which can be promisingly used for electronic packaging.The research results obtained in this paper will have practical application in the packaging field of high-power electronic components.