Multilevel Memory And Logic Operation Of Stable Perovskite Memristor

With the development of 5G technology and the Internet of Things,society has entered the digital age,and the amount of data has increased exponentially.However,the traditional Von Neumann architecture has encountered bottlenecks,and the semiconductor industry is gradually entering the post-Moore era,which requires the development of new materials and devices.Among them,memristor has advantages such as low power consumption,flexible size,and easy integration,making it a promising candidate for the next-generation non-volatile memory devices.In particular,perovskite-based memristors have excellent ion migration and carrier transport capabilities and have made some progress,but their stability has limited their further development.How to achieve good performance while ensuring stability is a key issue.Therefore,this article is mainly based on the all-inorganic perovskite Cs₂Ag Bi Br₆ and Bi Fe O₃ materials for research.The preparation,performance,conversion mechanism,and potential applications of memristor are studied,ensuring stability while improving device performance.The specific research content is as follows:（1）First this work discusses the preparation conditions of Cs₂Ag Bi Br₆ thin films and deposits a flat and high-quality film.It then used the films as a functional layer to prepare the ITO/Cs₂Ag Bi Br₆/Ag memristor,which exhibited good bipolar resistive switching characterisstics.By setting different limiting currents,multi-level storage function can be achieved.Finally,through scaling the double logarithmic curve,the resistive switching mechanism is the formation and rupture of conductive filaments by silver and bromine ions under electric field.（2）Based on the previous work,an improved all-inorganic ITO/Sn O₂/Cs₂Ag Bi Br₆/Ni O_x/Ag n-i-p architecture memristor is prepared.The preparation of Ni O_x was improved by using end-capping agents to attach hydrophobic ligands to Ni O_x nanoparticles,which improved their dispersibility in non-polar solvent toluene,making it possible to spin-coat them onto the perovskite film.This effectively avoids direct contact between silver electrode and double perovskite,while Ni O_x can passivate the double perovskite film and improve its crystallinity.Then,the I-V characteristics and cycling durability of the resistive switching device are tested.It is found that after adding Ni O_x and Sn O₂ layer,the device exhibites stable asymmetric resistive switching characteristics,and the on/off ratios was increased to 50 due to the increase of high resistance state resistance value,with the retention time of the resistance state being greater than 10³ s.In addition,stable three-state storage is achieved based on the asymmetry,and the n-i-p memristor exhibites good stability and could still achieve resistance switching after being placed in the atmosphere for one year.Finally,the resistive switching mechanism is studied,and it is found that the asymmetric resistive switching was achieved by the ion migration inside the perovskite and the coupling of p-n junction electric field.（3）Finally,the preparation and electrical properties of FTO/Bi Fe O₃/Ag memristor with the perovskite structure are studied,as well as its potential application in logic operations.It exhibits good bipolar resistive switching characteristics and cycling durability in the I-V test,with high resistance state（HRS）value of about 3.3×10⁴Ωand a low-resistance state（LRS）value of around6.0×10²Ω.Then,logic circuits based on resistance are designed to realize logic AND and OR operations,and based on the HRS and LRS resistance values of Bi Fe O₃-based memristor.Multisim simulation shows the results were consistent with the theoretical analysis,indicating its potential application in logic operations.