Design And Fabrication Of Lead Based Halide Perovskite Transistors

Currently,with the continuous development of technology,optoelectronic information technology is advancing rapidly.In order to meet people’s demand for efficient and intelligent new optoelectronic devices and systems,researchers are working hard on research and development.These efforts aim to improve the ability and performance of optoelectronic technology while reducing costs and energy consumption,in order to better serve various fields of human society,such as communication,medical care,and security.It can be foreseen that these new technologies will flourish and be more widely applied in the future.Therefore,an increasingly popular trend is to use advanced device architecture and novel optoelectronic materials to drive the development of future information technology.Among them,the excellent optoelectronic properties and easy processing,as well as low cost of metal halide perovskites have been widely used and researched in fields such as light-emitting diodes and solar cells.The implementation of this trend can bring more efficient,reliable,and energy-saving equipment.The specific content of the paper is divided into the following two aspects:Simulation design and experimental preparation were carried out for CsPbBr₃quantum dot all-inorganic perovskite transistor devices.The possibility of making CsPbBr₃quantum dot all-inorganic perovskite transistor was verified by simulating the simulation model.Then,the output current of the transistor device gradually increased as the channel length shortened by changing the different structural parameters of the transistor device through the simulation model.Increasing the thickness of the active layer also increased the output current of the device.Reducing the thickness of the insulating layer also increased the output current of the device.A PMMA film was prepared using a one-step spin-coating method,and the possibility of using PMMA material as the dielectric layer of the transistor was explored.Then,according to the simulation results,a CsPbBr₃ quantum dot perovskite film was prepared using a one-step spin-coating method to explore the manufacturing process of perovskite transistors.The film was characterized,and CsPbBr₃ quantum dot perovskite film and CsPbBr₃quantum dot perovskite thin-film field-effect transistor were successfully prepared.The saturation region carrier mobility and threshold voltage of the device were 0.24×10^-5cm² V^-1 s^-1 and-5 V,respectively,and the on/off ratio of the device was close to 10.Design and experimental preparation have been carried out on different A-site organic cation two-dimensional perovskite phototransistors.Simulation models of different A-site organic cation two-dimensional perovskite phototransistors were designed,and the effects of different film parameters on device performance were explored by changing light illumination and different film parameters.Increasing light illumination,increasing charge carrier mobility,and reducing bandgap width under light illumination can all improve the performance of the transistor model.Two-dimensional halide perovskite thin-film transistors based on 2-thiazoly lmethy lammonium（Th MA⁺）and butylamine（BA⁺）organic cations were prepared,and well-structured BA and Th MA two-dimensional perovskites were successfully synthesized.Phototransistors with different A-site organic cations were prepared,and performance was optimized by testing output characteristics and transfer characteristics curves.A Th MA thin-film transistor had a field-effect mobility of 0.35×10^-5 cm²V^-1s^-1,a threshold voltage of-5 V,and an on/off current ratio of 30.A BA thin-film transistor had a field-effect mobility of 0.2×10^-5 cm²V^-1s^-1,a threshold voltage of-5 V,and an on/off current ratio of 10.Under 405nm laser excitation,both BA and Th MA two-dimensional perovskite phototransistors exhibited excellent photo-switching characteristics.