| The rapid development of mobile communications and the explosive growth of radio frequency terminals have brought earth-shaking changes to production and life.Especially with the advent of 5G technology,we are about to enter the era of the Internet of Everything.Nowadays,with the coexistence of various communication systems,frequency spectrum as a limited resource has been paid more attention,and dual-band and multi-band communication has become the focus of research.In the radio frequency front-end(RFFE)equipment,the radio frequency power amplifier(PA)is the device that consumes the most energy,realizing the high-efficiency output of PA in the desired frequency band is an effective way to save energy.This thesis expounds the basic theory of PA,such as the classification,index,matching method,based on above theory,the research on dual-band matching is emphatically carried out,then several dual-band PAs are proposed.(1)A design method of dual-band PA with band-pass characteristics is proposed.Firstly,the continuous class-J mode and continuous inverse class-F mode in the internal current-generator(I-gen)plane are analyzed,the harmonic conditions that make PA work in the hybrid mode are obtained.Then,through an open-circuit stepped impedance resonator(SIR),two transmission zeros are introduced outside the designed band to form a band-pass filter while realizing harmonic control.In order to verify the rationality of design,a concurrent dual-band high-efficiency PA operating at2.4 GHz and 3.5 GHz was designed and implemented with CGH40010 F GaN HEMT(High Electron Mobility Transistor).The drain efficiency(DE)at the two frequencies were 77.3% and76% and corresponding gains were 11.3 and 11.7 d B,respectively,while having an adjacent channel leakage ratio(ACLR)better than-25 d Bc.(2)A three-step dual-band transformation structure with harmonic control function is applied,which makes each part of the output matching network(OMN)meet different impedance conditions to achieve dual-band match in package plane.Then make it satisfy continuous class-J PA mode impedance condition at the designed bands,which expand the bandwidth of PA while ensuring high efficiency.A high-efficiency PA suitable for 5G dual-band is designed and manufactured by CGH40006 P.The measurement results show that proposed PA has exceeds 70% DE in 3.1-3.6 GHz and 4.7-5.1 GHz,and the saturation gain is higher than 7 d B.(3)A dual-band Doherty PA design method with high back-off efficiency is presented.Basic on the above design and apply it to the main circuit and auxiliary circuit of Doherty PA.A three-section impedance inverter is proposed,which can realize impedance transformation at two frequency points,then dual-band other parts of Doherty,a dual-band Doherty PA for 5G application is obtained.The designed PA has more than 60% saturated DE in 3.3-3.6 GHz and 4.8-5.0 GHz,and the 6 d B back-off DE is 46.3%-54.2% and 40.9%-44%,respectively,and the saturated output power is higher than 41.3 d Bm.The ACLR in both bands is better than-27 d Bc.(4)The pre-research is carried out for GaN HEMT with different gate widths and gate fingers in the E-band.According to the design indicators and process characteristics,the types of transistors required were analyzed,then all types of transistors were drawn and tape-out,and the I-V tests are performed on the die. |
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