| With the rapid development of wireless communications,precision guidance,satellite positioning systems and electronic warfare,radio frequency microwave integrated circuit(RF IC)have been widely utilized and have produced a series of changes.Among them,the radio frequency power amplifier(PA),as a key component of the transceiver,benefits from the continuous development of semiconductors and its manufacturing processes.Its operating frequency,power density,and integration have been greatly improved.High-performance high-power monolithic Monolithic microwave integrated circuit power amplifier(MMIC PA)is favored by frontier fields such as aviation,aerospace,5G communication and military radar,and has become a research hotspot in the industry.However,with the continuous improvement of the integration level of high-power MMICs,the size of interconnect lines is shrinking,the structure of interconnect lines is becoming more complex,and the current density is also increasing,resulting in more significant electromigration(EM)effect,which further leads to the serious problem of continuous reduction of circuit reliability.Nowadays,the reliability of high-power MMIC interconnects has become an important factor affecting its design and manufacturing costs,and more and more scholars have begun to focus on this topic.The purpose of this paper is to use ANSYS finite element analysis to study the interconnection reliability of high-power MMIC PA.Firstly,a three-dimensional model of high-power Ga N MMIC PA is constructed by using ANSYS WORKBENCH modeling,layout conversion and parametric design language(ANSYS parametric design language,APDL)modeling.Based on the established model,the electromigration theory and ANSYS finite element analysis are combined to realize the thermoelectric analysis,thermomechanical stress analysis and atomic flux divergence calculation and analysis of the circuit under the conditions of different temperature,current and geometry.In particular,as the PA structure is complex,the modeling time is long,and the circuit structure and circuit environment need to be modified,the automatic modeling and analysis of PA is completed by using parametric programming,and the interconnection reliability analysis of various circuit structures and different application environments is realized.Statistical analysis was conducted on the AFD distribution and temperature distribution results obtained by simulation,and the relationship between each physical quantity and Atomic flux divergence as well as the feasible domain of each physical quantity were obtained,which helped PA designers to quickly determine the area with the weakest reliability of the Ga N MMIC PA.It greatly improves modeling efficiency,provides important basis for researchers to modify circuit layout,and provides important guidance for improving circuit reliability design. |
