Design Of CMOS Transconductance Enhanced Low Phase Noise Wide Frequency Domain Voltage Controlled Oscillators

The Voltage Controlled Oscillator(VCO)is a circuit that has the ability to modify the input voltage signal in order to alter the local oscillation signal’s frequency.It plays a significant part in RF communication circuits,such as phase-locked loop systems,in which the VCO is a crucial component to provide the actual output signal for the phase-locked loop,and in transceiver systems to provide a stable carrier signal.Consequently,it is very important and valuable to analyze the phase noise,frequency tuning range,power consumption,and others.The study begins with an explanation of certain fundamental oscillator ideas,followed by analyses of their performance indices,phase noise,and typical passive devices.Inductivecapacitive voltage-controlled oscillator(LC-VCO)circuits are constructed and simulated,and a series of modeling and simulations are conducted for the phase noise and frequency tuning range performance.First,a dual-coupled transconductance-enhanced inductance-capacitance voltage controlled oscillator circuit is proposed for the phase noise of the oscillator and its use in a dual-band;second,a scheme of active inductance is designed for the frequency tuning range of the voltage controlled oscillator by using a slew device to realize coarse and fine tuning by changing the inductance value of the active inductor and the voltage controlled oscillator’s.The active inductor’s inductance and the variable capacitor’s capacitance can be adjusted coarsely and finely to produce the solution’s wide frequency tuning range.For the voltage controlled oscillator’s phase noise performance,a low phase noise,low power voltage controlled oscillator based on 130 nm CMOS is presented.By using complementary cross-coupling pairs to provide negative resistance,capacitor splitting technology,impedance matching,and a dual-band application that can be used for the Ku and Ka bands,respectively,it is possible to solve the problem of high loss and high phase noise for high frequency band.Only 2.5m W are used by the VCO when the supply voltage is 1.2V.In the low frequency region,the phase noise is-115.3 d Bc/Hz at 1 MHz offset and-134.8 d Bc/Hz at 10 MHz offset.In the high frequency band,the phase noise is-109.67 d Bc/Hz at 1MHz offset and-129.23 d Bc/Hz at 10 MHz offset.The phase noise in the high frequency range is-109.67 d Bc/Hz at 1MHz offset and-129.23 d Bc/Hz at 10 MHz offset.129.23 d Bc/Hz.For the frequency tuning range of a voltage controlled oscillator,a 130 nm CMOS-based wide frequency domain voltage controlled oscillator is proposed by implementing an active inductor instead of a conventional spiral inductor with a slew.A high quality factor inductor and tunable inductor are designed to achieve wide frequency tuning range performance and to optimize the overall power consumption of the circuit.The inductance value of the active inductor and the capacitance value of the variable capacitor can be changed by tuning the input voltage signal,allowing for a wider frequency operating range and giving the voltage controlled oscillator good frequency tuning capability.The frequency tuning range is roughly equal to86%,the oscillator’s phase noise at 1MHz frequency bias is-100.7d Bc/Hz,and the circuit’s total power consumption is 34.2m W.The frequency coverage ranges from 740 MHz to 1.82 GHz.