Research On Low-Power Polymer Transistors Based On Hafnium-Based Ferroelectric Gate

As wearable electronic devices become more prevalent,there is a growing demand for flexible and plastic electronic devices.Organic transistors,an important component in flexible circuits,are gaining attention due to their advantages over traditional silicon-based and new two-dimensional material transistors,such as carbon nanotubes,in terms of low cost,flexibility,and plasticity.These transistors have a wide range of potential applications in fields such as sensors,flexible displays,and RF electronic tags.There are two types of traditional organic transistors: organic small molecule transistors and organic polymer transistors.While the former is incompatible with organic preparation processes like solution spin coating,printing,and inkjet printing and is challenging to manufacture on a large scale,organic polymer transistors can be produced inexpensively by preparing thin films through solution,printing,and other methods,all while maintaining excellent chemical stability and mechanical plasticity.However,conventional organic transistors have poor switching performance due to the low dielectric constant of the gate dielectric layer and poor contact with the semiconductor layer.This results in high driving voltage,large subthreshold swing,and mismatch with low-power flexibility requirements.To address these issues,a low-power organic polymer transistor was developed using a combination of a ferroelectric gate dielectric layer,self-assembled molecular layer interface modification,and van der Waals process.The study achieved the following:(1)Developed a low-power polymer transistor device based on ferroelectric HZO gate,utilizing the high dielectric constant and negative capacitance effect of ferroelectric material to improve the unit electric capacity of the organic polymer transistor gate dielectric layer,reducing the threshold voltage to around-0.3V.(2)Optimized the interface between the HZO gate dielectric and organic semiconductor by introducing OTS self-loading molecular layer for interface modification,improving the thin film morphology of organic semiconductor and enhancing the operating current and current switching ratio of the device.(3)Reduced contact resistance through the introduction of Van der Waals process,achieving pure physical contact between the source/drain electrode and the organic semiconductor,resulting in improved device performance with an average subthreshold swing of 104 m V/dec over an order of magnitude source-drain current range.Overall,this work provides an in-depth investigation of low-power organic polymer transistors based on ferroelectric HZO gates.It covers various aspects of polymer transistor materials,interface regulation,and device optimization,achieving remarkable results.This development presents a new technical solution for the advancement of low-power flexible electronic devices and has potential applications in organic sensors,organic digital circuits,wearable devices,and other areas.