Design And Multivalue Storage Control Features Of Nonvolatile α-Fe₂O₃ Memristors

The mainstream semiconductor memory faces the bottleneck of size development at present.The development of a new type of nonvolatile memory with excellent performance of high speed,high density and low power consumption has become a research hotspot in the field of semiconductor memory.The research on memristor is still immature.There are some problems such as low resistive switching ratio and poor performance.It is urgent to find memristor with higher resistive switching ratio and high density storage performance to meet storage requirements.In this thesis,the nonvolatileα-Fe₂O₃ nanowire amnesia resistor with W/α-Fe₂O₃/FTO structure has been designed using semiconductor oxideα-Fe₂O₃ nanowires as the research object.The nonvolatile resistive storage characteristics and the resistive storage mechanism of the device are systematically investigated,and the resistive storage model of the device is constructed by Matlab software simulation.The main research elements of this thesis are as follows.（1）The nonvolatileα-Fe₂O₃ memristor with W/α-Fe₂O₃/FTO structure was designed.The experimental results show that theα-Fe₂O₃ memristor has nonvolatile bipolar resistive storage characteristics,and the resistive switching ratio of the device can be stably maintained over two orders of magnitude at the reading voltage of 0.1V.In addition,the resistive storage behavior of the device satisfies the formation and disconnection resistive storage mechanism of oxygen vacancy conducting filaments.The results indicate that theα-Fe₂O₃ memristor has an important application prospect for the next generation nonvolatile memory.（2）The nonvolatileα-Fe₂O₃ nanowire memristor with multivalue resistive storage regulation was constructed.The experimental results show that theα-Fe₂O₃nanowire memristor exhibits a nonvolatile,bias-voltage controllable multivalue resistive storage property,and the resistive switching ratio of the device can be stably maintained at about three orders of magnitude at the reading voltage of-0.1V.The multivalue resistive memory of the device follows the formation and disconnection resistive storage mechanism of the oxygen vacancy conducting filament.In addition,the multivalue resistive memory with controllable setting voltage is realized by orderly adjusting the setting voltage of the device.The resistive switching ratio of the device can be modulated from one to three orders of magnitude,indicating that theα-Fe₂O₃ nanowire memristor has important potential for future development in high-density nonvolatile storage.（3）Based on the resistive storage characteristics of the nonvolatileα-Fe₂O₃nanowire memristor,the circuit simulation model of theα-Fe₂O₃ nanowire memristor was established by Matlab.The results show that the constructed circuit simulation model of the device is consistent with the resistive storage characteristics of the actual device,demonstrating the reliability of the device and the accuracy of the simulation model.