Study On The Preparation Of Electron Multiplier Layer In EBCMOS

Electronic Bombardment Active Sensor(EBCMOS)is a high gain,fast response,low-power,and low-cost optical imaging device that combines the advantages of vacuum detectors and solid-state imaging devices.It is an important development direction for low light imaging devices.This article establishes a study on the preparation of electron multiplier layers in EECOMS imaging devices,laying a theoretical and technical foundation for the preparation of high gain EBCMOS electron multiplier layers.This article mainly discusses the impact of the electron multiplier layer in the EBAPS imaging device on its charge collection performance.Based on the principle of carrier transport,the Monte Carlo method was used to theoretically study the effects of passivation layer type,thickness,incident electron energy,P-type substrate thickness,and doping concentration on the distribution and collection of secondary electrons.The results indicate that using silica with a low passivation layer density as the passivation layer is more conducive to increasing the depth of incident photoelectrons and thus increasing the charge collection efficiency;Reducing the thickness of the passivation layer and increasing the energy of the incident electrons is beneficial for reducing the recombination of dead layers on doubling electrons,thereby increasing the charge collection efficiency;This greatly reduces the thickness and doping concentration of the P-type substrate,which is beneficial for reducing the recombination of charge carriers during the diffusion process of doubling electrons,thereby greatly improving the charge collection efficiency.After simulation optimization,the maximum charge collection efficiency of the device can reach 42.5%,providing theoretical support for the development of domestic EBCMOS devices.Secondly,the preparation process of the electron multiplier layer was studied.Study the effects of chemical corrosion and mechanical grinding techniques on the surface quality of silicon wafers under different conditions.Research has found that an electron multiplier layer with high uniformity and smooth surface can be prepared,and optimized to obtain an electron multiplier layer with a roughness of less than 15 μ m and 0.83 nm.The electron enhancement performance of the electron bombardment imager used as an electron multiplier layer was analyzed.On this basis,a set of experimental bench was established,and the key parts of the bench-vacuum system,pulse light source,etc.-were designed in detail.Research has found that the gain of the electron multiplier layer increases with the increase of incident energy.Experiments have shown that electron multiplier materials prepared using ultra-thin structures have better electron gain characteristics.