| The photo-action dielectric detecting apparatus for the silver halide materials is designed and set up in this paper on the basis of Microwave Absorption Technique (MWA) from the point of view of the photo-action kinetics. Photoelectron rise and decay signal curve of various emulsion samples, which is exposed by 35ps short pulse laser, is measured. The corresponding relation of photo-absorption saturation curve and the photographic characteristic curve is obtained, and farther the quanta efficiency of free photoelectron is also obtained. By analyzing the influence of iodide on photoelectron lifetime, the optimization iodide level and doping position that can increase photoelectron lifetime for AgCl and AgBr emulsion of different crystal structure is obtained. As shallow electron traps (SETs) dopants, the action of K4Fe(CN)6 that can increase photoelectron lifetime and photographic efficiency is analyzed. Optimization concentration of K4Fe(CN)6 in cubic AgCl emulsion is affirmed. The trap-action of Ir+ dopants that can reduce high-intensity reciprocity failure and fog is analyzed. By comparison of photoelectron decay characteristic of dye-sensitized T-grain and cubic AgBr emulsion, free electron lifetime of T-grain emulsion is lower than of the cubic emulsion and redound to form latent image specks. A model composed of intrinsiccenters and SETs is founded, and a suit of kinetics differential equation describing photoelectron rise and decay processes is brought forward. By according computer simulation results of this differential equation with experiment results, trap parameter of SETs are obtained. The trap depth and capture section of K4Fe(CN)e are 0.115eV and 2.136×10-17cm2, respectively.
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