The Study Of The Anodic Bonding Between SiO2-Na₂O-AlO Function Glasses And Metals

Anodic bonding technology is commonly used in microelectronics packaging. It used electricity and heat interactions to connect metal, semiconductor and ceramic materials. It plays an important role in the field of microelectronics manufacturing. The common anode method is equivalence to the two single-layer anodic bonding paralleled process; bonding process was under the influence of external electric field. The ions come from cathode simultaneously mobilized to the anode and formatted depletion layer at the interface, in turn, and response with anode materials connected effectively. Interface microstructure analysis showed that the interface is the essence of ion migration and proliferation, binding area was formatted by the glass (ceramic)-the transition layer-metal structure, spread on both sides of the interface transition layer gradient distribution of chemical elements.In this paper, the AB-1000 anodic bonding reactor was designed to meet the test parameters of anodic bonding technology required reaction conditions. Form the modulation pulse generator circuit, the circuit advantage is sustainable and efficiently for the sample to provide a stable bonding pressure DC voltage.In this paper, we used orthogonal method analysis the glass - aluminum multi-chip anode bonding process. We analysis the anodic bonding process, using optical microscope, SEM, universal tensile testing machine and other equipment analyzed the structure and bonding microstructure the mechanical properties of the bonding sample. And we discussed how to format the transition zone.Interface microstructure analysis showed that the interface is the essence of ion migration and proliferation, binding area was formatted by the glass (ceramic)-the transition layer-metal structure, spread on both sides of the interface transition layer gradient distribution of chemical elements. Experiments found that oxygen element, aluminum elements in glass and aluminum bonding process simultaneously to the glass-aluminum interface, the proliferation of alkali metal ions in the depletion layer. In final, aluminum ion and the non-bridge-bond oxygen atoms in the depletion layer of glass occurred oxidation reaction in the interface to form a permanent bond. Strength of glass-aluminum-glass anodic bonding increases with temperature and voltage, fracture occurred in the glass matrix near the Al interface. The conclusion indicated that the interface bond strength is higher than the matrix material. Therefore, this article maintained that the anode method is a reliable multi-chip bonding technology.The sol-gel technology formed a uniform sample coating used in anodic bonding. And a transition zone was formed at the sample interface. The technology can be used at complex microelectronic components on the shape of anodic bonding.