Highly Consistent Orientation Of ZnO Nano-arrays Synthesized By Two Step Method

ZnO is an excellent semiconductor material which has a broad application indye-sensitized solar cells, the photocatalytic properties of ZnO have connection with thegrain size, shape and surface defects of the nano-array in preparation, so the research ofgrowth of technology and nano-arrays of ZnO seed layer films is currently one of thefocus.The highly ordered ZnO nanorod arrays is prepared on FTO substrates usingtwo-step method, The first step is pre-fabricated seed layer film by magnetronsputtering and sol-gel(vertical lifting) method, research the process parameters in thepreparation process. Second, the highly consistent of ZnO nanorods is prepared bychemical bath deposition method, researching the mechanism of the growingconcentration on ZnO nanorods, finally, analysis the morphology of ZnO nanorodswhich is pre-fabricated by magnetron sputtering and sol-gel method, researching thedifference of two methods in preparation and growth. The phase composition andmorphology of the sample films were tested by AFM, XRD, and SEM.The phase structure and morphology of ZnO is considered as the quality evaluationfactors in seed layer prefabricated process, researching the influence of differentsputtering conditions on the ZnO seed layer from changing the distance between targetand substrate, sputtering power, O2/Ar and annealing temperature partial pressure ratioin magnetron sputter. Analyze the annealing temperature to get the best preparationconditions of the sol-gel method. The results show that the increases of distancebetween target and substrate, the small particle size, meanwhile uniformity of variation,as the sputtering power increased, the particles and film surface mobility become larger,and reduce O2/Ar partial pressure will form film gap and defects, but the particledistribution uniform, the annealing temperature can improve the degree of crystallinityof theparticles within the film, and the best preparation process is that the distancebetween target and substrate is50mm, the sputtering power is100W, the O2/Ar partialpressure is1:3, the annealing temperature is400℃that the same to sol-gel method.The research of ZnO nanorods is prepared by chemical bath deposition. Mainly onthe growth concentration of two kinds of seed layers that ZnO nanorods growth on.Nanorods prepared by magnetron sputtering seed layer growth perpendicular to thesubstrate, the (002) diffraction peak intensity highest, indicating that orientation alongthe c-axis with high unity, The sol-gel method pre-seed layer can be grown ZnO nanorods with hexagonal structure by chemical bath deposition method, the nanorods isaffected by solution concentration significantly. The solution concentration increased,the ZnO nanorods growth better, and the best solution concentration is0.05mol·L-1. ToCompare ZnO nanorods prepared on two kinds of seed layers, the ZnO nanorodsprepared on magnetron sputtering seed layer growth with proper size interval, smallerdiameter, longer length is fit for preparation of the composite anode film.