Effect Of Dc-sputtering Parameters On The Structure And Electical Properties Of Mo Thin Films

In this paper Mo thin films has been deposited on soda-lime glass substrate-s using DC magnetron sputtering method. The influence of the film between sp-uttering condition and film structure and electric property, who’s intrinsic relati-on between structure and property and nucleation and growth mode was discuss-ed using XRD, SEM and resistivity test method, deposited with different time, power, pressure, and Substrate temperature, has been discussed. The influence between the sputtering process conditions and structure and electrical property was discussed systematically. The high quality Mo thin films has been deposited by this method, with60W deposition power,0.1Pa deposition pressure and the room temperature.The (110) crystal plane was the preferred orientation plane to the film dep-osited with different DC magnetron sputtering condition. Through different de-position time the film growth method was testified as Volmer-Weber mode. Wh-en the deposition power was changed, the film, deposited with80W, has the hig-hest X-ray diffraction peak intensity of the (110) crystal plane, the best crystal, t-he biggest thickness and the most smooth and compact surface. Combining w-ith the film deposited with80W, these property of the film deposited with60W is a little bad. When the deposition pressure was changed, the film deposited with0.1Pa has the highest X-ray diffraction peak intensity of the (110) crystal plane, the best crystal and the least surface disfigurement. And within a low sub-strate temperature range (T<200℃), the film deposited with different substrate temperature had the little difference of crystal quality In the electrical property, the resistivity of films can reach10-5Ω·cm order of magnitude. And this film can meet the electrical property requirements of BC layer of CIGS solar cells. The film, deposited with100℃substrate temperature,60W deposition power,0.1Pa deposition pressure, has the lowest resistivity. But The resistivity of films, deposited with different conditions (200℃substrate te-mperature,60W deposition power, and room temperature,60W and80W depos-ition power, deposition pressure all were0.1Pa), has a little difference. Also de-posited with high deposition pressure or low deposition power, the film resistivi-ty may be multiple relations of magnitude to the lowest film resistivity. And wit-hin a low substrate temperature range (T<200℃), the film had the little differen-ce of resistivity.