| The modeling and characterization of a SiC p-type thyristor is presented in this work. The implemented model of this thyristor family is a level-3 physics based model. Level-3 models are expected to be accurate for such device properties as capacitances, lifetimes, etc., so that they predict switching behavior with high fidelity. SIC material properties and device geometry are crucial in developing physical models. A 1 kV p-type SiC thyristor provided by Cree is used to validate the model. The lumped charge method, known for its high accuracy in modeling bipolar devices, was used to derive the model. |
