Annealing effects on copper(indium,gallium)selenide and copper indium selenide thin films

The purpose of my research is to study the effects of annealing on Cu(In,Ga)Se 2 (CIGS) and CuInSe2 (CIS) thin films. Annealing polycrystalline films improves the films by minimizing secondary phases in the film and by increasing the crystal grain size. Annealing consists of heating the film to high temperatures, which varies between several hundred degrees to more than 500 degrees Celsius. The length of annealing time also affects the thin film. Films are annealed in a time frame from several minutes to several hours. Questions to be addressed are what preferred temperature to use for annealing and for what length of time. Furthermore, for repeated annealing of a film, would better results be found from annealing at increasing temperature with time held constant, or with increasing time while holding the temperature constant.