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Studies On Preparation Of VO2 Thin Film And Its Application Basic Property

Posted on:2004-03-08Degree:DoctorType:Dissertation
Country:ChinaCandidate:S L YangFull Text:PDF
GTID:1102360122970367Subject:Iron and steel metallurgy
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PANGANG(group) company is the most important steel iron vanadium titanium base in our country, rich vanadium titanium magnetite resource are stored and vanadium resource storage are more than 63% of nation in PANXI area. In the past 30 years,PANGANG(group) company have produced plenty of steel material, vanadium slag, V2O5, V2O3, the alloy of vanadium iron and other vanadium product as raw material with vanadium titanium magnetite resource, and make China become a important country on produce vanadium in the world. But synthetical application level of vanadium resource is still lower, the kind of vanadium product is fewer comparatively and their contents of science technology and their rank are still lower in our country. Therefore, study and exploiture of new vanadium product with high content of science and technology for heighten on synthetical application level of vanadium resource further are very necessary and urgent.The study of function material VO2 thin film have gotten the very attention for it's a important character, It occur metal-semiconductor phase transformation(M-S phase transformation) under lower temperature(68℃), at the same time, it's optical and electrical character occurs the sudden change. The study in the past for gotten VO2 thin film are all based on pure inclusive vanadium raw material, So far, do not discovered any research reports for gotten VO2 thin film are based on industrial V2O5 as raw material. Under this conditions that PANXI area have rich industrial V2O5 and its price is very cheap, So the study for gotten VO2 thin film are based on industrial V2O5 as raw material will be significant and realistic.The study results (conclusions) in this paper as following:(1) In laboratory have established a new technology process for gotten V2O5 sol-gel based on industrial V2O5 crystal as raw material by the reformative inorganic sol-gel method. Suitable technology parameter for gotten V2O5 sol as following: the temperature at melt of V2O5 is (800~900)℃, and the time of keep this temperature is (5~20) min; We can control the transformation from V2O5 sol to V2O5 gel by control the technology process parameter, these technology process parameters as following: the concentration of V2O5 in sol must be larger than 20 g/L, at the same time the temperature at melt of V2O5 is (800~900)℃ and the time of keep this temperature is (5~15)min.(2) Selected the spinning and dipping as daily method for preparation of film, it can satisfy requirement at experiment for preparation of films completely. By the spinning way, the viscosity of colloid is more bigger and the revolution number of turntable is more littler and substrate is more nearer to revolving center, then the thickness of thin film is more bigger. By the dipping way, the viscosity of colloid is more bigger and its density is more littler, the thickness of thin film is more bigger. Contrarily, they are more littler. The suitable gel viscosity is (1.0~3.0)Pa?S.(3)The covers colloid equipment by refit and homemade, the developmental resistance-temperature measure equipment, they are all satisfied to conventional experiment requirement, and anticipative effect is better. The pull speed of covers colloid equipment on dipping way by homemade is (1.5~3.0) mm/S; the major property index of temperature-resistance measurement set as following: applied temperature is from room temperature to 150℃, the control precision of temperature is ±1℃, ascending temperature speed is about (1~2) ℃/ min, degressive temperature speed is 2 ℃/ min, degressive temperature speed is (3~5) ℃/min when start using cooling system. (4) The methods for gotten VO2 thin films based on V2O5 thin films through the deoxidize process by H2 and the thermal decompose process by N2 are feasible not only in theoretics but also in technology. In the laboratory we have established technology process for preparation of VO2 thin film through the deoxidize process by H2 and the thermal decompose process by N2, VO2 thin films that own notable characteristic on M-...
Keywords/Search Tags:pentoxide vanadium, dioxide vanadium thin film, sol-gel, preparation technology, sudden change of resistivity, impure semiconductor
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