| This paper reviewed overseas and domestic research actuality of memristor,analyzed the structure, principle and main characteristics of HP memristor.Thememristor with nanometer scale, non-volatile and stackability has ability to design largescale integrated circuit to continue even break the Moore’s law. The memristor haspotential to design artificial neural network and artificial intelligence analogue computerarchitecture because of operation of multi value.This paper further studyed the new dual extended structure memristor of ourproposed and samples made, main research works are carried out:1.Gived dual extended nanometer scale structure memristor (i.e.Pt/TiO2-x/TiO2/TiO2+x/Pt new nano structure memristor and gained successful one Chinaauthorization patent and two USA authorization patents). In this paper, further researchon the intersection of two Pt nanowires sandwiched between three layers ofTiO2-x/TiO2/TiO2+xnano titanium dioxide semiconductor film, made intoPt/TiO2-x/TiO2/TiO2+x/Pt nano structure, on the dual extended memristor model,working mechanism and characteristics.2. According to the ion drift theory, put forward a new modeling method ofclassical HP type memristor, and compared the characteristics of dual extendedmemristor model, and the simulation is implemented in Matlab and HSPICE etc. othermainstream circuit simulation software environment. Change state simulation model indifferent types and amplitude excitations, the corresponding analysis and comparison oftest results of several related model. Simulation results show that the model can embodythe state change of the hysteresis curve, also can reflect the linear resistancecharacteristic of the memristor reach boundary condition after the, this meet thephysical test results better.Studyed the circuit structure, logic based on reading andwriting operation based on HP type memristor, put forward a intelligent storagestructure of the memristor storage and operation characteristics.3. By analysising on working principle and theoretical of dual extended memristor model, mathematical expressions of voltage and current of dual extended memristorover time are given, how dual extended memristor works are expressed more accurate.4. Studyed the preparation of dual extended memristor’s key components in-depth,including upper and lower platinum nano wire electrode, intrinsic titanium dioxide nanolayer TiO2; nano layer TiO2-xwith Oxygen vacancies; nano layer TiO2+xwith Oxygenion, the composition and structure of nano components are analysised by using the SEM,XPS,TEM characterization.The manufacturing process flow and material sample of dualextended memristor are given.5. Studyed V-I characteristic curve of the nano platinum electrodes, dual extendedmemristor V-I characteristic curve, repeatability and hysteresis of V-I curve. Thesimulation parameters were determined scientifically and reasonably through theanalysis of the characteristic curve.6. Compared with HP type memristor can prove that dual extended memristor havefaster switching speed, lower power. This paper put forward a new memory circuitstructure based on dual extended memristor, and gived the structure chart, layout andapplication. |
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