Double Extension Today, Nano Structure Model And Characteristic Research

The paper is concerned on the properties of the new ideal circuit element, a memristor. The existence of the memristor as the fourth ideal circuit element was predicted in1971based by Leon Chua. Hewlett-Packard (HP) labs announced them design the first experimental memristor in May1,2008. As the broad prospect of application in data storage, neural simulation and circuit design,memristor has received the worldwide attentionWe proposed double expansion memristor with three layers nano-films of Pt/TiO2-x/TiO2/TiO2+x/Pt sandwiched structure in this paper,based on study of the working principles of HP memristor. As the double expansion effect, the switching speed of the double expansion memristor mentioned would be faster.This paper first introduces the current situation, introduces model of HP memristor and spin memristor and the model of the new spin memristor briefly.And introduces the application of memristor in model analysis,biological research and memory manufacturing. Secondly introduced the basic principle,structure model of the double expansion memristor. Finally, the paper gives the test result of the double expansion memristor, such as characteristic analysis results of Pt nanowire, memristor, repetitiveness and V-I characteristic hysteretic curve of double expansion memristor. In the figure of characteristic analysis results of Pt nanowire, the current is6.0X10-8A, power is1.8X10-7W, when voltage is+3V; the current is-2.0X10-8A, power is6X10-8WW, when voltage is-3V. In the figure of repetitivenes and V-I characteristic hysteretic curve, we can see double expansion memristor has a good repeatability, and can realize function of memristor.