Nanostructures Memristor Manufacturing Technology Research

Memristor is a non-linear resistor with a memory function. It is able to change the value of resistor by controlling current.If define the high resistence as '1',low resistence as'0'.The resistors has the ability to store data. Actually speaking memristor is a nonlinear resistor.In May 2008,HP Lab researchers have published an paper in "Nature" confirmed the existence of memristor in nanoscale electronic systems. The resistence value should be changed by applying different voltages.Useing different resistance represent different digital signal,by which semiconductor circuit could achieve data storage functions.This paper reviews the study of Memristor abroad and domestic,describe memristor's structural designing,working principles,manufacturing technology, researching three layers nano-structure Memristor manufacturing technology. The work of this paper can be listed as follows:Firstly introduce the basic theory of HP labs two lays memristor.oxygen vacancies theory of TiO2 thin film,band theory and switch principle of Memristor.Introduced key factor performance of Memristor, and through key factor formula discover some important findings which impact Memristor performance;Secondly three layers nanostructure Memristor model and processCombined with HP Memristor propose the new three-layer structure of membrane Memristor. Deeply unfold its principles,and its energy band theory.Elaborate preparation process of the three membrane nanostructure Memristor. And the advance in theory of the three layers Memristor to two-layer film Memristor is large range of resistance change, multi-state memory, reactioning speed.Thirdly the growth of Pt nanowires and surface featuresIntroduce various of preparation methods for one-dimensional nanowires and the advantages and disadvantages of each method.In (H2PtCl6·6H2O+H3BO4+H2O) electrolyte composed of AAO template, respectively,on the electrochemical deposition growth of platinum nanowires for 6hours and 12hours.Characterized by SEM and TEM observation, nanowires were located in the template through the separation column,the length is about 12μm, diameter is about 50nm. The rate of nanowires growth is 1μm/h.Lastly preparation of TiO2,surface features and discuse the method of TiO2-X and TiO2+x thin films。By magnetron sputtering, TiO2 thin films were prepared using pure titanium target in the (oxygen:argon gas) flow ratio of (1:2) system. TiO2-X film were prepared using titanium target+iron in the (oxygen:argon gas) flow ratio of (1:2) system. TiO2+x film were prepared with titanium target in the (oxygen:nitrogen:argon gas) flow ratio of (1:1:2)systems. And the films were characterized by SEM.It can be observed by the SEM characterization. Thickness of film is 48nm.