Fabrication Of ZrO₂ Thin Films By Sol-gel Process And Their Resistive Switching Characteristics

Because of its fast response,high stability,low power consumption,resistance switching memory?RRAM?is expected to become a new generation of memory.The development and application of this type of memory involves a lot of problems.But to switching material,such as electrode materials and fine processing is particularly critical.Around these problems,the paper mainly discusses the feasibility of zirconium oxide as a resistance barrier,the influence of the mechanism of electrode for resistance switching mechanism.The micro-fabrication of zirconium oxide is processed and micrometer size resistance characteristics of zirconium oxide are tested in real-time.First,study was carried out on the sol-gel preparation of zirconium oxide thin film and the influence of heat treatment temperature on the film structure.Different structure of thin film can be got through from different heat treatment temperature.Namely under the 300?heating temperature is for amorphous ZrO₂ membrane;Under 500? is for micro crystalline ZrOz membrane;Under the 700? is for polycrystalline anatase structure of ZrO₂ thin films.It is found out that organizational structure and the electrode of zirconia resistance characteristics and mechanism has an important influence.In the tin oxide?ATO?film as the bottom electrode and with Cu as the top electrode the resistance switching mechanism is to give priority to with the formation of Cu conductive filament.Study on Cu/ZrO₂/ATO resistance switching device performance for bipolar resistance characteristics was carried out,and at 300? heat treatment it can get amorphous group as well.And with Pt as the top electrode,the resistance switching mechanism is for oxygen hole forming mechanism which is formed into conductive filaments.Study on Pt/ZrO₂/ATO resistance switching device performance for single polarnty model of resistance characteristics was carried out,and in 500? heat treatment of micro crystalline ZrO₂ membrane resistance characteristics is exellent.Further studies showed that,with Pt as the top electrode,through to zirconium oxide thin films dopped Cu can change the resistance switching mechanism of ZrO₂ membrane.It can be make sure that in the formation mechanism of Cu conductive filament is to give priority to with oxygen hole forming mechanism of conductive filament.And this leads to changed from single polarity model to dual polarity model.The dopping process can control the resistance changing type of zirconium oxide resistance switching device.Study of resistance swithching characteristics is at 50-300 K?-223?27??temperature.ZrO₂ membrane resistivity switching will changed as the temperature decreases.Cu/Zr02/ATO resistance switching device at the 50K?-223??,resistance switching characteristics is significantly reduced,switching ratio?Roff/Ron?is getting lower than at room temperature.We think that as the temperature is reduced,the diffusion coefficient of Cu decreases at the same time the joule heating effect in reducing,leading to the switching ratio?Roff/Ron?getting lower however the stability is improved.Benzoyl acetone?BzAcH?combined with chemical modification agent was prepared and photosensitive zirconia UV gel film was characteristic.The direct photographic of zirconium oxide resistance superfine thin film was prepared by the possibility of graphics.Through the double beam exposure method it can get the lattice size is about 1?m ZrO₂ microarray.Further build the tiny graphics real-time resistance performance test system,with atomic force conducting probe as the top electrode,the scan resistance switching of zirconium oxide thin film surface with micro-sized zone morphology can be carried out at the same time with the I-V performance at the same time.Through building up the in-situ resistance switching performance test platform it can get the lattice size is about 1?m Zr02 microarray micro resistance switching characteristic of the graphics.