Electrical properties of fluorinated amorphous carbon (a-C:F(x)) and aluminum nitride (AlN) films | Posted on:2002-11-14 | Degree:Ph.D | Type:Dissertation | University:Stevens Institute of Technology | Candidate:Biswas, Nivedita | Full Text:PDF | GTID:1461390011991990 | Subject:Physics | Abstract/Summary: | | Electrical properties of Fluorinated Amorphous Carbon (a-C:Fx) and Aluminum Nitride (AlN) films were studied using capacitance-voltage (C-V), conductance-voltage (G-V) and current-voltage (I-V) measurements. The films were deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique under different conditions.; The C-V characteristics of the a-C:Fx, films was stretched about the voltage axis, exhibited hysteresis effects and was characterized with a frequency dependent flatband voltage. The equivalent parallel conductance data showed a good fit to theory only if continuum of states is assumed. I-V characteristics exhibited low current in the forward and reverse biasing conditions. Annealing the sample in hydrogen introduced charge leakage in the film and was characterized with a damaged interface.; The C-V characteristics of the AlN films were marked with frequency dependent flatband voltage and exhibited minimal hysteresis. Depending on processing conditions, equivalent parallel conductance data showed a good fit to theory either for single time constant or continuum of states model. I-V characteristics indicated that the current conduction in these films is a bulk limited process. Dielectric constant, as calculated using C-V curves and using I-V curves, showed good agreement. Annealing the samples in hydrogen resulted in charge polarization and reversal of hysteresis cycle but the interfacial characteristics showed marked improvement. | Keywords/Search Tags: | Films, A-c, Aln, C-V, Characteristics, Using, I-V | | Related items |
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