Study On The Amorphous Compound Semiconductor Films And Its Characteristics

Amorphous compound semiconductor has many kinds, and the amorphous oxide semiconductor thin film is easy to be prepared. It has research foundation. The amorphous semiconductor compounds were applied to the near infrared detector, it will make the enormous contribution in the near infrared detection technology research. This paper is trying to seek several amorphous oxide semiconductor materials, contribute for realizing band gap in the near infrared range by doping.Reactive magnetron sputtering was used to prepare the copper oxide thin films and the characteristics of silver oxide films were studied in details. Main research content are as follows: Scanning electron microscope and X ray diffraction were used to applied to analyze surface morphology and the content of thin film materials. The transmittance of the films was measured using spectrophotometer, and then the band gap of the thin films was derived by extrapolation method. After optimization of the preparation parameters, under a large number of repeated experiments. The results of experiments are as follows:(1) Surface morphology and the content of thin film materials. The results showed that: when the OFR was 1:1, the pressure is 1Pa, the copper oxide thin films surface is smooth, and the size of grain is tiny and uniform. When the OFR was 1:1, the substrate temperature is normal atmospheric temperature, the film was silver oxide film. When the OFR was 1:2,the substrate temperature is 200℃, the film was silver oxide film too. And when the substrate temperature was normal atmospheric temperature, the silver oxide films surface had fewer holes, and the grain was uniform.(2) Optical properties of the thin film. When the OFR was 1:1,the pressure was 1 Pa, the band gap of the copper oxide thin film was 1.75cV. Elevated substrate temperature and increased oxygen How, the band gap of the silver oxide film was from 2.48eV to 2.57eV.(3) Electrical properties of the thin film. The different OFR and the pressure effect on the electrical parameters of the copper oxide thin films had been studied on. The different OFR and the substrate temperature affected on the electrical parameters of the silver oxide films had been studied on. The results showed that, if the OFR was 1:1 and 2:1, the copper oxide thin films showed an n-type behavior. If the OFR was unchanged, the mobility and resistivity were elevated as the pressure was elevated. Its carrier density was reduced when the pressure was increased. The results of experiments showed that the silver oxide films showed both n-type and p-type behavior. When the OFR was 1:1, substrate temperature is 200℃.the silver oxide films" resistivity was 4.45×104Ω·cm, carrier density was 1.84×1010cm-3, it showed a p-type behavior.