Imaging Electrons in Ultra-thin Nanowires

Ultra-thin semiconductor nanowires are promising systems in which to explore novel low-dimensional physics and are attractive candidates for future nanoelectronics. Ultra-thin nanowires with diameters of 20 to 30 nm are essentially one-dimensional (ID) for moderate electron number, because only one radial subband is occupied. Low-temperature scanning gate microscopy is especially well suited for improving our understanding of nanowires in order to optimize the construction of nanowire systems. We use a home-built liquid-He cooled scanning gate microscope (SGM) to probe and manipulate electrons beneath the surface of devices. The SGM's conductance images are obtained by scanning the charged SGM tip above the sample and recording the change in conductance through the device as a function of tip position.;We present simulations of extracting the amplitude of the 1D electron wavefunction along the length of the quantum dot in an ultra-thin InAs/InP heterostructure nanowire (diameter = 30 nm) using a SGM. A weakly perturbing SGM tip slightly dents the electron wavefunction inside the quantum dot, and we propose measuring the change in energy of the dot due to the perturbation as a function of tip position. By measuring the change in energy of the dot and by knowing the form of the tip potential, the amplitude of the wavefunction can be found. This extraction technique could serve as a powerful tool to improve our understanding of electron behavior in quasi-1 D systems.;We have used our SGM to image the conductance through an ultra-thin (diameter ∼ 30 nm) 1nAs nanowire with two InP barriers. Our imaging technique provides detailed information regarding the position and flow of electrons in the nanowire. We demonstrate that the charged SPM tip's position or voltage can be used to control the number of electrons on the quantum dots. We spatially locate three quantum dots in series along the length of the ultra-thin nanowire. Using energy level spectroscopy and the conductance images, we find the length of all three of the dots, and we determine the dots' relative coupling strength.