| While the investigations of the Cd(Zn)Te characteristics were completed, a new method to make arbitrary anode shapes, without the troublesome shadow mask technique, was found. With this technique, the two-anode geometry Cd(Zn)Te detector was introduced and tested. The semiconductor performance of the two-anode geometry detectors for the incoming gamma rays of 241Am, 57Co, and 137Cs were compared to the responses of the planar device. The very promising photon energy resolutions of 9.3 and 5.4% FWHM were obtained with the two-anode geometry detector for the gamma rays energies of 122 keV and 662 keV, respectively, while no discernible full energy peaks were apparent with the planar detector. Several simulation programs that are very easy to handle were developed as useful tools for investigating the complicated gamma ray pulse height distributions, which were due to the energy deposition events inside the semiconductors. Comparisons to the known values and with the results from other application programs, validated the information obtained from the simulation programs, which were developed during this research effort. A graphical user interface (GUI) was designed for the user's convenience in order to enter the required input parameters for the specific requirements of each simulation programs. The idealized noise free spectra for the planar detector and for the small pixel geometry detector were successfully obtained by applying Monte Carlo techniques. |
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