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Low temperature synthesis of aluminum-nitride

Posted on:1990-08-20Degree:Ph.DType:Dissertation
University:Polytechnic UniversityCandidate:Ko, YoungheeFull Text:PDF
GTID:1471390017454258Subject:Chemistry
Abstract/Summary:
The most important physical properties of aluminum nitride are low electrical conductivity (resistivity: 10;Other electrically insulating materials with interesting thermal properties are either prohibitively expensive (diamond:660 Wm;Aluminum nitride can be prepared by several different methods. The most well known alternatives are listed below:(UNFORMATTED TABLE OR EQUATION FOLLOWS);In all of the procedures, especially those with reaction temperatures greater than 1200;We explored different methods to prepare AlN. Using organosilyl compounds, such as hexamethyldisilazane (HMDS) or nonamethyltrisilazane (NMTS) and AlCl;The reaction with HMDS can be expressed as(DIAGRAM, TABLE OR GRAPHIC OMITTED...PLEASE SEE DAI);Also the reaction with NMTS can be expressed as(DIAGRAM, TABLE OR GRAPHIC OMITTED...PLEASE SEE DAI);We explored additional techniques to make AlN using aluminum sulfide, alkylamine, and azide compounds. These reactions give several advantages such as low reaction temperatures, good yield, and less contamination.;Examples we have explored are shown below:(UNFORMATTED TABLE OR EQUATION FOLLOWS)...
Keywords/Search Tags:TABLE OR, Low, Aluminum, Reaction
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