Study On Optoelectronic Property And Mechanism Of Nanoscale Compound Doping Silicon Oxide Films

Nanoscale physics and technology, developed from the early 1980s, will be the leading technology in the near future. Since nanoscale materials take much more advantages than traditional materials, they will be applied to many kinds of industrial fields. There is currently an increasing interest in Si nanoscale material as a material that offers new application in silicon-based optoelectronics and is compatible with silicon IC technologies. Photoluminescence (PL) and electroluminescence (EL) from Si-substrate nanoscale material obtained by various techniques has been extensively studied. We have obtained much success in this field.Some important results obtained are as following:(1) C-containing (or Si-containing) silicon oxide film has been fabricated using the compound-target magnetron co-sputtering technique. Electroluminescence spectra are measured from Au/C/SiO₂/p-Si and Au/Si/SiO₂/p-Si structure, and the luminescence peak which lies in 650nm did not shift with the increasing forward voltage. The current-voltage (I-V) characteristics of the Au/C/SiO₂/p-Si and Au/Si/SiO₂/p-Si structures are measured. Both of the Au/C/SiO₂/p-Si and Au/Si/SiO₂/p-Si structures have good rectifying behavior. At last, the EL mechanisms of the structures are discussed.(2) Ge/silicon oxide nanometer multiplayer films are deposited by the r.f. magnetron sputtering technique. The Au/Ge/silicon oxide nanometer multiplayer films/p-Si structure was fabricated and its electroluminescence (EL) characteristic was studied. Electro-yellow-luminescence spectra were measured from Au/Ge/silicon oxide nanometer multiplayer films/p-Si, and the structure has rectifying behavior.(3) Ge/SiO₂ and Si/SiO₂ films were deposited using the two-target alteration magnetron sputtering technique. The Au/Ge/SiO₂/p-Si and Au/Si/SiO₂/p-Si structure were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO₂/p-Si and Au/Si/SiO₂/p-Si structures have good rectifying behavior. All the EL spectra from the two types of the structures have peak position around 650～660nm. The EL mechanisms of the structures are discussed.(4) Ge/ SiO₂ and C/SiO₂ films are deposited using the two-target alternation RF magnetron sputtering technique with Ge (or C) and SiO₂ targets. The films are annealed in N₂ atmosphere at 600℃C for 30 min. Finally, semitransparent Au films are evaporated onto the films to form Au/Ge/SiO₂/p-Si and Au/C/SiO₂/p-Si structures. The EL spectra from the two structures are measured under forward bias from 5 to 12V. The EL mechanisms of the structures are discussed.