Study On The Effects Of Irradiation On The Performance Of Semiconducting Magnetic-sensing Transducers

The effects of short-term irradiation with low dose rateγ-rays andβ-rays on the electromagnetic parameters of InSb, GaAs, Si and Ge semiconducting magnetic-sensing transducers at different working states were systemically studied. In the experiments, two kinds ofγ-rays and one kind ofβ-rays was supplied by the ⁶⁰Co, ¹³⁷Cs and ⁹⁰Sr-⁹⁰Y radiant point respectively. According to the Half Time of nuclide and the actual dose rate, the irradiation time was used to express the irradiation dose. The results indicated that the irradiation could lead to the changes of electromagnetic parameters of devices at any working states. These changes did not disappear rapidly after the irradiation stop, which reflected that the radiation damage could not be restored through the annealing courses at room temperature. When the devices were not at working states and not in any magnetic field, the certain relation between the changes of electromagnetic parameters and the energy ofγorβparticles, irradiation time, types of rays etc could not be found because of many complex factors. When the devices driven by constant current were not in any magnetic field, three kinds of rays all could cause the input terminal resistance of any device to linearly raise with the increase of irradiation time. Because the sudden change of carrier concentration due to the ionization effect could not be found clearly, corresponding to the rapidly change of the input terminal resistance, the radiation defects induced by the displacement effect became the essential reason. According to the changes of input terminal resistance induced by the same rays in the same time, not only the direct proportion relation between the effects of irradiation and the irradiation temperature, and the inverse proportion between the effects of irradiation and the liminal energy for displacement and the relative mass of atoms in semiconductors could be confirmed, but also the radiation resistive capability could be estimated approximately. Among these types of devices, the maximal were Ge devices, the next were Si devices and the minimal were InSb and GaAs devices. When the devices driven by constant current were in a certain magnetic field, their input terminal resistance and Hall voltage increased during the irradiation withγ-rays. Although the reasons were the same as the above, the extent and trend of changes were different because of the action of magnetic field. All these results could help to the relevant studies of radiation defense because of the similarities between the experimental conditions and actual environments.