The Deposition And Research Of Multi-layout Films In BN/diamond To Fabricate SAW Device

The SAW(Surface acoustic wave) technology is a kind of burgeoning technology,it is a cross knowledge of the acoustics,the electronics and the optics.Boron nitride(BN) has a lot of excellent properties and an extensive application foreground as a kind of wide band gap semiconductor material,h-BN(hexagonal BN) has high phase velocity and high transmission.So it could be the ideal piezoelectric thin film in SAW devices.Therefore, using h-BN/Diamond,could optimize the multilayer structure of Piezoelectric films/high acoustic velocity films in SAW devices.In this paper,BN thin films are deposited on Si and Diamond substrates by changing different technical parameters using RF magnetron sputtering technique.The structural properties of the films are analyzed and studied by Fourier transform infrared spectroscopy(FTIR).These films are all h-BN;The suitable experimental parameters are: sputtering power is from 200W to 250W;the type of substrate is Si(100);the inverse proportion of N₂ and Ar is 20:4;the rotary voltage is between 100V and 120V;the pressure of working parameter is among 1.2Pa-1.6Pa.From the analysis of the experimentations we can conclude that:if the sputtering power is higher,it will exist sputtering-back phenomenon which can reduce the deposited speed;the inverse proportion of N₂ and Ar isn't not only allow too big but also too small,it will restrain the deposition of the film if big and reduce the deposited speed if small;the power of particle is strong when the working pressure is big,this will reduce the synthesis of B and N panicle,and it will deposit impure h-BN films which include c-BN when it researches more than 2.0Pa.Therefore,it could be able to deposit BN thin films on Diamond substrates to form he multilayer structure of h-BN/Diamond,and fabricate high quality SAW devices.