Secondary Electron Emission Characteristics And Thin Film Preparation Technology Of MgO

MgO belongs to face-centered cubic structure with a lattice constant of 4.213 (A|°), with a lot of good properties, can be used as a buffer layer between functional oxide thin films and silicon substrate, and protecting layer of plasma display panel (PDP), as well as the dynode materials of microchannel plate.In this thesis, MgO thin films are prepared in silicon substrate by spin coating sol-gel technique, using magnesium acetate as the starting material. Discussing the consistence of solution, film layer and annealing temperature on film quality effects. After 600℃annealing treatment in oxygen atmosphere, MgO thin film with (200) (220) crystalline orientation are obtained. The precursor are prepared by adding a certain amount of zinc acetate to regulate the resistivity of MgO, to meet the requirements on the resistivity of micro-channel plate conductive layer, analyzing the secondary electron emission characteristics of MgO in theory, giving the thickness valid reference which is 1.13 to 1.52 nanometer of MgO thin film as dynode emission layer, and gain simulation analysis of the silicon micro-channel plate is given when MgO is used as dynode emission layer materials. Under the same experimental conditions, MgO which is used as dynode emission layer materials has a higher gain than SiO₂.