Synthesis And Characterization Of One Dimensional Semiconductor Materials

Recently, a great deal of interest in wide band gap semiconductor of one -dimensional GaN nanomaterials has been stimulated by the discovery of novel property and potential application in optical, electric and mechanical fields. In this disserctation, one-dimensional GaN nanowires were systematically synthesized and investigated. The main results are as follows.1. In tubular furnace, high quality GaN nanowires were synthesized by ammoniation at 1000℃. Ga₂O₃ and NH₃ were used as starting materials to prepare GaN nanowires. The change in the content of Ga₂O₃ resulted in the synthesis of GaN nanowhiskers. Field emission scanning electron microscope (FESEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) were used to characterize the...