Calculation On Temperature Distribution In Chemical Mechanical Polishing

Chemical mechanical polishing (CMP) is an innovative technique to traditional surface manufacture process. Nowadays, the micro electronic industry and the computer technology develop rapidly so that the higher requirements are requested to the surface of many parts, e.g. on the silicon chip with the diameter of 300mm the surface roughness and waviness are required to reach nanometer or sub-nanometer levels. The traditional surface manufacture process doesn't fulfill this goal. Then CMP comes into being, combining the chemical and mechanical actions so as to realize the precise removal of the surfaces to reach the higher level of surface roughness and surface waviness.There are many aspects that affect the CMP, e.g. contact stress, relative velocity, characteristics of the pad and slurry as well as polishing temperature etc. The temperature is one of the most important aspects of all. In the finishing polishing stage of CMP, stable polishing status is requested to realize defect-free chip surface and it makes sense to well control the temperature for the polishing quality and polishing velocity. In the paper, based on the detailed description of CMP backgrounds, significance and theory as well as the relationship between the contact and flow in polishing and also based on the knowledge such as the tribology, hydrodynamics and thermodynamics, the flow equation considering the temperature variation in CMP is set up and the temperature field in the contacting area in the polishing is subsequently studied with the help of numerical algorithm such as multi-mesh algorithm. The distribution and variation rule of the temperature field are simulated, after comparing and validating with the experiment data in the document. The result complies with the experiment data and also meets the requirement to polishing environment in finish polishing stage.