Study On Flows And Temperature Distribution Of CMP Process

The progressively decreasing feature size of the circuit components and increasing layers have given tremendous impetus to increasing global surface planarization of the various thin film layers that constitute the integrated circuits (IC), wherein more new materials have been applied in the manufacturing process. On the other hand, to develop the storage density of magnetic disks, the surface roughness of the magnetic disk ,magnetic head, and the surface quality must be achieved of nano-scale. Global planarization is becoming one of the most challenges in present electronic industry, whereas the traditional polishing is difficult to satisfy the requirements of surface. Chemical mechanical polishing (CMP) has been selected as the only effective machining technique for the ncessasities of surface global planarzation. It is greatly developed in the wide applications, and the study on CMP mechanism is becoming a hot-point problem.With the help of theory of hydrodynamics the CMP flows mechanism was studied in this paper. Firstly, the flow equations on a general condition was derived, introduced the solution method of the equation, and gave out the relationships between stress distribution, load, moments, pad velocity and pivot height in typical cases. Further, the pad and the nano-scale particles influences were considered. Also by using thermodynamics, and then, we simulated and calculated the temperature distribution. The simulated results found that temperature influences are negligible in the given finishing CMP process, and thus it is suitable for CMP requirement. In the computational course, it adopted the line-relaxation and multi-grid method to get quickly and stably convergent programs, and gained the results by C++ coding. Analysed on the press, moments, load, temperature variations at different operation parameters were finally verified by experiments.