Study On Arc Ion Plating With Magnetron Of Same Basic Component For Both Deposited Layer And The Substrate (H62/Cuå'ŒQAl9-4/Cu)

The technology of the same basic component for both deposited layer and substrate has been created in recent years. In past, this technology was studied under the without magnetron condition. And nobody has ever studied it in the condition of magnetron. So, our work is to study depositing H62 and QA19-4 on Cu using the technology of the same basic component for both deposited layer and substrate with magnetron. In the study, we discussed the plating composition and distribution, morphology, micro-hardness and adherence of plating layer with the substrate of the same basic component for both deposited layer and substrate under the magnetron condition., compared with QA19-4 /Cu in the without magnetron condition.Under the condition of magnetron, the results of H62/Cu test showed that the layer is composed of three parts: transition layer (fake and real diffusion layer), fine crystal layer and mushroom crystal layer. The excellent adherence of the deposited layer and substrate is because of transition layer, an interface formed by splashing and diffusing of composition. Although the composition of the deposited layer is same to the target, there are some differences, which was resulted from the technology parameters and working conditions. There are many kinds of compounds of Cu and Zn in the deposited layer of H62/Cu, which are similar to that of the target, and improve the hardness of the deposited layer. The depositing rate relates with technology parameters. The higher the arc current and the nearer the distance between the target and specimen are, the faster the depositing rate is. The results also showed that the arc current influences the size of particles in plating layer. The lower the arc current is, the smaller the size of particles in plating layer is, and vice verse.The tests of QA19-4/Cu indicated that the two kinds of layer both have transition layer. The composition and phase structure of the deposited layer is similar to that of the target. Besides a phase of Al, there are some other compound phase in the QA19-4/Cu layer, such as AlCu,AlCu₃,CuAl₂. The morphology of plating is like to the welding and casting structure. The efficiency of technology is greatly improved because of deposited particles strengthened by the magnetron, which increased force of impact, enhanced depositing rate and decreased growing time. The micro-hardness with magnetron is higher than that without magnetron. The adherence of the deposited layer and substrate is intensified because magnetron condition decreased the size of deposited particles which is favor of forming concentrated layer.Compared with the alloying layer prepared by penetrating process, the whole deposited layer of AIP can be regarded as the complete modified layer. The difference between both is that AIP has no need to heat the whole specimen, leading to shorter time and less deformity. The composition of deposited layer can be controlled by adjusting the composition of target. Compared with the common ion plating, the range of layer can be thicker because the basic element of the target and substrate is similar in some physical parameters.The research and exploration of this work will give an impetus to the development of ion plating technology, which is famous of saving energy, saving materials and less pollution.